Inventor · disambiguated record
Quanxin Yun
Also filed as: YUN QUANXIN
8 granted patents·8 pending applications·17 citations·filing 2010–2024
80Inventor score
Top patents by PatentIndex Score
16 records- 0177US8673722B2Strained channel field effect transistor and the method for fabricating the sameHUANG RU·Filed 2011·Granted Mar 18, 2014·6 cites·5 claims
- 0271US8288238B2Method for fabricating a tunneling field-effect transistorHUANG RU·Filed 2010·Granted Oct 16, 2012·5 cites·10 claims
- 0364USD1084393SSequencing instrumentBGI SHENZHEN·Filed 2024·Granted Jul 15, 2025·2 cites·1 claims
- 0461US8541847B2Semiconductor device and method for fabricating the sameAN XIA·Filed 2010·Granted Sep 24, 2013·2 cites·11 claims
- 0558US8450155B2Method for introducing channel stress and field effect transistor fabricated by the sameHUANG RU·Filed 2011·Granted May 28, 2013·1 cites·4 claims
- 0658US2024375096A1Detection structure and method, detection chip, and sensing deviceBGI SHENZHEN·Filed 2021·Application pending·0 cites
- 0758US2024375107A1Microwell structure, preparation method, and chipBGI SHENZHEN·Filed 2021·Application pending·0 cites
- 0857US2025010290A1Microfluidic device and microfluidic detection deviceBGI SHENZHEN·Filed 2021·Application pending·0 cites
- 0956USD1084394SSequencing instrumentBGI SHENZHEN·Filed 2024·Granted Jul 15, 2025·1 cites·1 claims
- 1056US2025018389A1Detection chip assembly tool, liquid injection apparatus and method, electronic device, and mediumBGI SHENZHEN·Filed 2021·Application pending·0 cites
- 1152US2025067703A1Membrane forming device and membrane forming methodBGI SHENZHEN·Filed 2021·Application pending·0 cites
- 1248US9484208B2Preparation method of a germanium-based schottky junctionUNIV BEIJING·Filed 2013·Granted Nov 1, 2016·0 cites·8 claims
- 1344US9312126B2Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrateUNIV BEIJING·Filed 2014·Granted Apr 12, 2016·0 cites·16 claims
- 1438US2018180567A1Microwell electrode and method for analysis of a chemical substanceBGI SHENZHEN·Filed 2016·Application pending·0 cites
- 1536US2012289004A1Fabrication method of germanium-based n-type schottky field effect transistorHUANG RU·Filed 2011·Application pending·0 cites
- 1635US2023092634A1System and apparatus for nanopore single molecule sequencingMGI HOLDINGS CO LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →