Inventor · disambiguated record
R. Scott Kern
Also filed as: CHRISTENSON GINA L · KERN R SCOTT
13 granted patents·1,728 citations·filing 1998–2005
95Inventor score
Files withLUMILEDS LIGHTING LLC10AGILENT TECHNOLOGIES INC1HEWLETT PACKARD CO1PHILIPS LUMILEDS LIGHTING CO1
Top patents by PatentIndex Score
13 records- 0198US6635904B2Indium gallium nitride smoothing structures for III-nitride devicesLUMILEDS LIGHTING LLC·Filed 2001·Granted Oct 21, 2003·302 cites·26 claims
- 0298US6420199B1Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacksLUMILEDS LIGHTING LLC·Filed 2001·Granted Jul 16, 2002·188 cites·10 claims
- 0397US6489636B1Indium gallium nitride smoothing structures for III-nitride devicesLUMILEDS LIGHTING LLC·Filed 2001·Granted Dec 3, 2002·247 cites·24 claims
- 0497US6320206B1Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacksLUMILEDS LIGHTING LLC·Filed 1999·Granted Nov 20, 2001·211 cites·22 claims
- 0595US6441393B2Semiconductor devices with selectively doped III-V nitride layersLUMILEDS LIGHTING LLC·Filed 1999·Granted Aug 27, 2002·133 cites·13 claims
- 0694US6914272B2Formation of Ohmic contacts in III-nitride light emitting devicesLUMILEDS LIGHTING LLC·Filed 2003·Granted Jul 5, 2005·40 cites·13 claims
- 0793US6657300B2Formation of ohmic contacts in III-nitride light emitting devicesLUMILEDS LIGHTING LLC·Filed 2001·Granted Dec 2, 2003·37 cites·9 claims
- 0893US6500257B1Epitaxial material grown laterally within a trench and method for producing sameAGILENT TECHNOLOGIES INC·Filed 1998·Granted Dec 31, 2002·145 cites·15 claims
- 0993US6274399B1Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devicesLUMILEDS LIGHTING LLC·Filed 2000·Granted Aug 14, 2001·113 cites·11 claims
- 1091US7345323B2Formation of Ohmic contacts in III-nitride light emitting devicesPHILIPS LUMILEDS LIGHTING CO·Filed 2005·Granted Mar 18, 2008·14 cites·11 claims
- 1191US6046465ABuried reflectors for light emitters in epitaxial material and method for producing sameHEWLETT PACKARD CO·Filed 1998·Granted Apr 4, 2000·93 cites·8 claims
- 1290US6194742B1Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devicesLUMILEDS LIGHTING LLC·Filed 1998·Granted Feb 27, 2001·135 cites·7 claims
- 1387US6280523B1Thickness tailoring of wafer bonded AlxGayInzN structures by laser meltingLUMILEDS LIGHTING LLC·Filed 1999·Granted Aug 28, 2001·70 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →