Inventor · disambiguated record
Rafal Ciechonski
Also filed as: CIECHONSKI RAFAL
2 granted patents·2 pending applications·0 citations·filing 2017–2022
27Inventor score
Technology areasH10P
Top patents by PatentIndex Score
4 records- 0159US11862459B2Semiconductor device having a planar III-N semiconductor layer and fabrication methodHEXAGEM AB·Filed 2022·Granted Jan 2, 2024·0 cites·4 claims
- 0247US11393686B2Semiconductor device having a planar III-N semiconductor layer and fabrication methodHEXAGEM AB·Filed 2018·Granted Jul 19, 2022·0 cites·5 claims
- 0333US2018277713A1Red light emitting diodes having an indium gallium nitride template layer and method of making thereofGLO AB·Filed 2017·Application pending·0 cites
- 0431US2021202236A1Forming a planar surface of a iii-nitride materialHEXAGEM AB·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →