Inventor · disambiguated record
Ramanathan Gandhi
Also filed as: Gandhi Ramanathan
25 granted patents·11 pending applications·12 citations·filing 2016–2025
92Inventor score
Top patents by PatentIndex Score
36 records- 0190US10629732B1Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistorsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 21, 2020·4 cites·15 claims
- 0285US12101946B2Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 0385US11335788B2Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devicesMICRON TECHNOLOGY INC·Filed 2018·Granted May 17, 2022·3 cites·20 claims
- 0485US2025098228A1Elevationally-Extending Transistors, Devices Comprising Elevationally-Extending Transistors, and Methods of Forming a Device Comprising Elevationally-Extending TransistorsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0584US2024413154A1Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0681US2025098213A1Devices including oxide semiconductor structures, and related electronic systemsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0780US11658246B2Devices including vertical transistors, and related methods and electronic systemsMICRON TECHNOLOGY INC·Filed 2019·Granted May 23, 2023·2 cites·18 claims
- 0878US12218236B2Devices including heterogeneous channels, and related memory devices, electronic systems, and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 4, 2025·0 cites·14 claims
- 0978US11996456B2Assemblies which include ruthenium-containing conductive gatesLODESTAR LICENSING GROUP LLC·Filed 2023·Granted May 28, 2024·0 cites·21 claims
- 1076US12199183B2Memory devices including oxide semiconductorMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 14, 2025·0 cites·9 claims
- 1175US11832454B2Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 28, 2023·0 cites·34 claims
- 1275US11329133B2Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted May 10, 2022·1 cites·54 claims
- 1374US12199182B2Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistorsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 14, 2025·0 cites·4 claims
- 1474US11515417B2Transistors including heterogeneous channelsMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 29, 2022·1 cites·16 claims
- 1574US11437521B2Methods of forming a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 6, 2022·1 cites·15 claims
- 1673US2025159925A1Memory devices including heterogeneous channels, and related electronic systemsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1771US12170324B2Transistors and arrays of elevationally-extending strings of memory cellsLODESTAR LICENSING GROUP LLC·Filed 2022·Granted Dec 17, 2024·0 cites·19 claims
- 1871US11152509B2Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistorsMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 19, 2021·0 cites·13 claims
- 1970US11695050B2Assemblies which include ruthenium-containing conductive gatesMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 4, 2023·0 cites·28 claims
- 2069US12133383B2Memory cell and method used in forming a memory cellsMICRON TECHNOLOGY INC·Filed 2023·Granted Oct 29, 2024·0 cites·9 claims
- 2169US11527620B2Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor materialMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 13, 2022·0 cites·19 claims
- 2268US11538919B2Transistors and arrays of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 2366US11908913B2Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 2464US11476259B2Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systemsKARDA KAMAL M·Filed 2021·Granted Oct 18, 2022·0 cites·20 claims
- 2564US11107817B2Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 31, 2021·0 cites·35 claims
- 2664US2022238658A1Integrated Assemblies Having Semiconductor Oxide Channel Material, and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2761US10998440B2Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2019·Granted May 4, 2021·0 cites·22 claims
- 2861US10964793B2Assemblies which include ruthenium-containing conductive gatesMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 30, 2021·0 cites·8 claims
- 2960US11856766B2Memory cell having programmable material comprising at least two regions comprising SiNxMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 26, 2023·0 cites·30 claims
- 3059US11038027B2Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor materialMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 15, 2021·0 cites·37 claims
- 3158US2024365546A1Multiple metal word line gates in a three dimensional memory arrayMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3257US2020227423A1Ferroelectric Devices and Methods of Forming Ferroelectric DevicesMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 3353US2024194264A1Memory cells and memory array structures and methods of their fabricationMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 3449US2017345831A1Ferroelectric Devices and Methods of Forming Ferroelectric DevicesMICRON TECHNOLOGY INC·Filed 2016·Application pending·0 cites
- 3545US2022271127A1Transistors And Arrays Of Elevationally-Extending Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 3640US2023018127A1Microelectronic devices with channel sub-regions of differing microstructures, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →