Inventor · disambiguated record
Randall J. Higuchi
Also filed as: HIGUCHI RANDALL · HIGUCHI RANDALL J
19 granted patents·10 pending applications·62 citations·filing 2004–2024
92Inventor score
Top patents by PatentIndex Score
29 records- 0196US8835890B2ReRAM cells including TaXSiYN embedded resistorsINTERMOLECULAR INC·Filed 2013·Granted Sep 16, 2014·11 cites·20 claims
- 0295US9018037B1Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devicesINTERMOLECULAR INC·Filed 2013·Granted Apr 28, 2015·14 cites·12 claims
- 0395US8883557B1Controlling composition of multiple oxides in resistive switching layers using atomic layer depositionINTERMOLECULAR INC·Filed 2013·Granted Nov 11, 2014·14 cites·20 claims
- 0494US9246099B1Low-temperature deposition of nitrides by UV-assisted ALD or CVDINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·9 cites·13 claims
- 0582US9246096B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2015·Granted Jan 26, 2016·3 cites·19 claims
- 0680US8853661B1Metal aluminum nitride embedded resistors for resistive random memory access cellsINTERMOLECULAR INC·Filed 2013·Granted Oct 7, 2014·4 cites·20 claims
- 0776US8802492B2Method for forming resistive switching memory elementsTONG JINHONG·Filed 2011·Granted Aug 12, 2014·3 cites·19 claims
- 0873US8969129B2ReRAM cells including TaXSiYN embedded resistorsINTERMOLECULAR INC·Filed 2014·Granted Mar 3, 2015·1 cites·20 claims
- 0964US9276203B2Resistive switching layers including Hf-Al-OINTERMOLECULAR INC·Filed 2012·Granted Mar 1, 2016·1 cites·20 claims
- 1064US8741698B2Atomic layer deposition of zirconium oxide for forming resistive-switching materialsTONG JINHONG·Filed 2011·Granted Jun 3, 2014·1 cites·18 claims
- 1162US2025250673A1ALD Deposition Utilizing MoO2Cl2 and MoO2Br2VERSUM MAT US LLC·Filed 2022·Application pending·0 cites
- 1260US9543516B2Method for forming a doped metal oxide for use in resistive switching memory elementsINTERMOLECULAR INC·Filed 2014·Granted Jan 10, 2017·0 cites·20 claims
- 1360US8846443B2Atomic layer deposition of metal oxides for memory applicationsHONG ZHENDONG·Filed 2011·Granted Sep 30, 2014·1 cites·19 claims
- 1457US9006026B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2014·Granted Apr 14, 2015·0 cites·17 claims
- 1556US9065040B2Controlling composition of multiple oxides in resistive switching layers using atomic layer depositionINTERMOLECULAR INC·Filed 2014·Granted Jun 23, 2015·0 cites·20 claims
- 1656US2024395459A1Strontium oxide interlayers for improved electrical device performanceWALDMAN RUBEN·Filed 2024·Application pending·0 cites
- 1755US9006696B2Metal aluminum nitride embedded resistors for resistive random memory access cellsINTERMOLECULAR INC·Filed 2014·Granted Apr 14, 2015·0 cites·20 claims
- 1855US2015176122A1Low-temperature growth of complex compound filmsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 1947US9018068B2Nonvolatile resistive memory element with a silicon-based switching layerINTERMOLECULAR INC·Filed 2013·Granted Apr 28, 2015·0 cites·20 claims
- 2045US9425394B2Doped oxide dielectrics for resistive random access memory cellsINTERMOLECULAR INC·Filed 2014·Granted Aug 23, 2016·0 cites·20 claims
- 2145US9040413B2Using saturated and unsaturated ALD processes to deposit oxides as ReRAM switching layerINTERMOLECULAR INC·Filed 2012·Granted May 26, 2015·0 cites·8 claims
- 2243US8791445B2Interfacial oxide used as switching layer in a nonvolatile resistive memory elementHIGUCHI RANDALL·Filed 2012·Granted Jul 29, 2014·0 cites·20 claims
- 2343US2015170923A1Feature Size Reduction in Semiconductor Devices by Selective Wet EtchingINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 2443US2014175360A1Bilayered Oxide Structures for ReRAM CellsINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 2542US2015179316A1Methods of forming nitrides at low substrate temperaturesINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 2641US2014154859A1Methods and Vehicles for High Productivity Combinatorial Testing of Materials for Resistive Random Access Memory CellsINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 2740US2016133837A1Low-Temperature Deposition of Metal Silicon Nitrides from Silicon Halide PrecursorsINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 2838US2017117282A1DRAM Capacitors and Methods for Forming the SameINTERMOLECULAR INC·Filed 2016·Application pending·0 cites
- 2936US2006051506A1Nitridation of high-k dielectricsSENZAKI YOSHIHIDE·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →