Inventor · disambiguated record
Rainer Yen-Chieh Huang
Also filed as: HUANG RAINER YEN-CHIEH
19 granted patents·4 pending applications·8 citations·filing 2021–2025
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD23
Top patents by PatentIndex Score
23 records- 0197US11508755B2Stacked ferroelectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·4 cites·20 claims
- 0296US11818896B2Cocktail layer over gate dielectric layer of FET FeRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0386US11769815B2Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
- 0484US12324161B2Annealed seed layer to improve ferroelectric properties of memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 0584US11729990B2Capping layer over FET FeRAM to increase charge mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·1 cites·20 claims
- 0683US2025275150A1Annealed seed layer to improve ferroelectric properties of memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0783US2024389341A1Cocktail layer over gate dielectric layer of fet feramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0882US12127411B2Cocktail layer over gate dielectric layer of FET FeRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 0979US12238932B2Ferroelectric memory device, manufacturing method of the ferroelectric memory device and semiconductor chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 1079US12232329B2Stacked ferroelectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1179US12114507B2Capping layer over FET FeRAM to increase charge mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1279US2024373641A1Capping layer over fet feram to increase charge mobilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1379US2024387685A1Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1477US12207474B2Stacked ferroelectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 1577US11917831B2Annealed seed layer to improve ferroelectric properties of memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 1676US12154965B2Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 1772US11690228B2Annealed seed layer to improve ferroelectric properties of memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 1872US11653501B2Ferroelectric memory device, manufacturing method of the ferroelectric memory device and semiconductor chipTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 1972US11581334B2Cocktail layer over gate dielectric layer of FET FeRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·0 cites·20 claims
- 2071US12453137B2Ferroelectric memory devices having improved ferroelectric properties and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 2170US11778914B2Organic gate TFT-type stress sensors and method of making and using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 2260US12274068B2Method of forming ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·9 claims
- 2356US11706928B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →