Inventor · disambiguated record
Raymond J. E. Hueting
Also filed as: HUETING RAYMOND J E · HUETING RAYMOND JOSEPHUS · HUETING RAYMOND JOSEPHUS ENGEL · HUETING RAYMOND JOSEPHUS ENGELBART
28 granted patents·1 pending application·546 citations·filing 1999–2005
97Inventor score
Top patents by PatentIndex Score
29 records- 0194US6441454B2Trenched Schottky rectifiersKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Aug 27, 2002·103 cites·13 claims
- 0292US7538337B2Nanowire semiconductor deviceNXP BV·Filed 2005·Granted May 26, 2009·23 cites·17 claims
- 0388US7033889B2Trenched semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Granted Apr 25, 2006·15 cites·6 claims
- 0487US6319777B1Trench semiconductor device manufacture with a thicker upper insulating layerKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Nov 20, 2001·45 cites·17 claims
- 0585US6936890B2Edge termination in MOS transistorsKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 30, 2005·32 cites·16 claims
- 0685US6600194B2Field-effect semiconductor devicesKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jul 29, 2003·40 cites·8 claims
- 0782US6541817B1Trench-gate semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Apr 1, 2003·73 cites·10 claims
- 0881US6774434B2Field effect device having a drift region and field shaping region used as capacitor dielectricKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 10, 2004·31 cites·18 claims
- 0978US6534823B2Semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Mar 18, 2003·25 cites·12 claims
- 1078US6515348B2Semiconductor device with FET MESA structure and vertical contact electrodesKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Feb 4, 2003·25 cites·20 claims
- 1177US6509608B1Trench-gate field-effect transistors and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Jan 21, 2003·25 cites·11 claims
- 1276US6833583B2Edge termination in a trench-gate MOSFETKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Dec 21, 2004·20 cites·7 claims
- 1368US7408223B2Trench insulated gate field effect transistorNXP BV·Filed 2004·Granted Aug 5, 2008·14 cites·9 claims
- 1465US6518129B2Manufacture of trench-gate semiconductor devicesKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Feb 11, 2003·16 cites·15 claims
- 1564US6784488B2Trench-gate semiconductor devices and the manufacture thereofKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 31, 2004·13 cites·9 claims
- 1660US7262460B2Vertical insulated gate transistor and manufacturing methodNXP BV·Filed 2003·Granted Aug 28, 2007·7 cites·11 claims
- 1758US7659169B2Semiconductor device and method of manufacturing thereofNXP BV·Filed 2005·Granted Feb 9, 2010·2 cites·9 claims
- 1856US7868424B2Semiconductor device and method of manufacturing the sameNXP BV·Filed 2005·Granted Jan 11, 2011·1 cites·20 claims
- 1955US6777780B2Trench bipolar transistorKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 17, 2004·7 cites·14 claims
- 2054US7696599B2Trench MOSFETNXP BV·Filed 2004·Granted Apr 13, 2010·6 cites·14 claims
- 2153US6559502B2Semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted May 6, 2003·6 cites·9 claims
- 2251US6956264B2Trenched semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Oct 18, 2005·4 cites·7 claims
- 2349US7671440B2Lateral field-effect transistor having an insulated trench gate electrodeNXP BV·Filed 2004·Granted Mar 2, 2010·2 cites·15 claims
- 2449US7160793B2Edge termination in MOS transistorsNXP BV·Filed 2005·Granted Jan 9, 2007·0 cites·3 claims
- 2548US7235842B2Insulated gate power semiconductor devicesNXP BV·Filed 2003·Granted Jun 26, 2007·4 cites·13 claims
- 2647US7199010B2Method of maufacturing a trench-gate semiconductor deviceNXP BV·Filed 2003·Granted Apr 3, 2007·3 cites·10 claims
- 2744US7629647B2Trench MOS structureNXP BV·Filed 2004·Granted Dec 8, 2009·2 cites·16 claims
- 2839US7109567B2Semiconductor device and method of manufacturing such deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Sep 19, 2006·2 cites·12 claims
- 2936US2007126055A1Trench insulated gate field effect transistorKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Raymond J. E. Hueting files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →