Inventor · disambiguated record
Rakesh Jain
Also filed as: JAIN RAKESH · JAIN RAKESH B
52 granted patents·6 pending applications·290 citations·filing 2012–2025
98Inventor score
Top patents by PatentIndex Score
58 records- 0199US11830963B2Heterostructure including a semiconductor layer with graded compositionSENSOR ELECTRONIC TECH INC·Filed 2022·Granted Nov 28, 2023·3 cites·20 claims
- 0298US9331244B2Semiconductor structure with inhomogeneous regionsSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 3, 2016·29 cites·21 claims
- 0397US9502509B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Nov 22, 2016·22 cites·20 claims
- 0497US9397260B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2012·Granted Jul 19, 2016·28 cites·20 claims
- 0597US9330906B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 3, 2016·28 cites·20 claims
- 0697US9281441B2Semiconductor layer including compositional inhomogeneitiesSENSOR ELECTRONIC TECH INC·Filed 2014·Granted Mar 8, 2016·27 cites·21 claims
- 0796US10069034B2Optoelectronic device with modulation dopingSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Sep 4, 2018·12 cites·20 claims
- 0895US9653631B2Optoelectronic device with modulation dopingSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 16, 2017·13 cites·20 claims
- 0995US9647168B2Optoelectronic device with modulation dopingSENSOR ELECTRONIC TECH INC·Filed 2015·Granted May 9, 2017·11 cites·20 claims
- 1095US8981403B2Patterned substrate design for layer growthSHATALOV MAXIM S·Filed 2012·Granted Mar 17, 2015·22 cites·20 claims
- 1193US9806228B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Oct 31, 2017·7 cites·20 claims
- 1293US9660133B2Group III nitride heterostructure for optoelectronic deviceSENSOR ELECTRONIC TECH INC·Filed 2014·Granted May 23, 2017·7 cites·20 claims
- 1393US9537054B2Semiconductor heterostructure with stress managementSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Jan 3, 2017·8 cites·20 claims
- 1493US9105792B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2012·Granted Aug 11, 2015·11 cites·21 claims
- 1591US9691939B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Jun 27, 2017·6 cites·20 claims
- 1691US9680061B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Jun 13, 2017·5 cites·20 claims
- 1790US9653313B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2016·Granted May 16, 2017·5 cites·20 claims
- 1890US9324560B2Patterned substrate design for layer growthSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Apr 26, 2016·5 cites·20 claims
- 1989US2024113251A1Device Including a Semiconductor Layer With Graded CompositionSENSOR ELECTRONIC TECH INC·Filed 2023·Application pending·0 cites
- 2088US9818826B2Heterostructure including a composite semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2014·Granted Nov 14, 2017·7 cites·20 claims
- 2187US9799793B2Semiconductor heterostructure with stress managementSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Oct 24, 2017·4 cites·20 claims
- 2285US10535793B2Group III nitride heterostructure for optoelectronic deviceSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Jan 14, 2020·3 cites·18 claims
- 2385US9634189B2Patterned substrate design for layer growthSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Apr 25, 2017·3 cites·20 claims
- 2484US9406840B2Semiconductor layer including compositional inhomogeneitiesSENSOR ELECTRONIC TECH INC·Filed 2015·Granted Aug 2, 2016·4 cites·20 claims
- 2583US10158044B2Epitaxy technique for growing semiconductor compoundsSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Dec 18, 2018·3 cites·20 claims
- 2683US9831382B2Epitaxy technique for growing semiconductor compoundsSENSOR ELECTRONIC TECH INC·Filed 2012·Granted Nov 28, 2017·5 cites·23 claims
- 2782US12300758B2Heterostructure including a semiconductor layer with graded compositionSENSOR ELECTRONIC TECH INC·Filed 2022·Granted May 13, 2025·0 cites·18 claims
- 2880US2025169227A1Device Including a Semiconductor Layer With Graded CompositionSENSOR ELECTRONIC TECH INC·Filed 2025·Application pending·0 cites
- 2979US11784280B2Optoelectronic device with reduced optical lossSENSOR ELECTRONIC TECH INC·Filed 2021·Granted Oct 10, 2023·1 cites·20 claims
- 3079US10804423B2Optoelectronic device with modulation dopingSENSOR ELECTRONIC TECH INC·Filed 2018·Granted Oct 13, 2020·1 cites·20 claims
- 3179US10622515B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2018·Granted Apr 14, 2020·2 cites·20 claims
- 3278US9923118B2Semiconductor structure with inhomogeneous regionsSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Mar 20, 2018·2 cites·20 claims
- 3377US11611011B2Heterostructure including a semiconductor layer with graded compositionSENSOR ELECTRONIC TECH INC·Filed 2020·Granted Mar 21, 2023·0 cites·20 claims
- 3476US2024421245A1Optoelectronic Device with Reduced Optical LossSENSOR ELECTRONIC TECH INC·Filed 2024·Application pending·0 cites
- 3575US11508871B2Heterostructure including a semiconductor layer with a varying compositionSENSOR ELECTRONIC TECH INC·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 3675US10903391B2Optoelectronic device with modulation dopingSENSOR ELECTRONIC TECH INC·Filed 2019·Granted Jan 26, 2021·0 cites·20 claims
- 3773US10460952B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2018·Granted Oct 29, 2019·1 cites·20 claims
- 3872USRE48943EGroup III nitride heterostructure for optoelectronic deviceSENSOR ELECTRONIC TECH INC·Filed 2020·Granted Feb 22, 2022·0 cites·38 claims
- 3972US10153396B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Dec 11, 2018·1 cites·20 claims
- 4071US10032956B2Patterned substrate design for layer growthSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Jul 24, 2018·1 cites·20 claims
- 4171US9748440B2Semiconductor layer including compositional inhomogeneitiesSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Aug 29, 2017·1 cites·20 claims
- 4271US9735315B2Semiconductor heterostructure with stress managementSENSOR ELECTRONIC TECH INC·Filed 2016·Granted Aug 15, 2017·1 cites·20 claims
- 4370US12100779B2Optoelectronic device with reduced optical lossSENSOR ELECTRONIC TECH INC·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 4464US10211048B2Epitaxy technique for reducing threading dislocations in stressed semiconductor compoundsSENSOR ELECTRONIC TECH INC·Filed 2013·Granted Feb 19, 2019·1 cites·17 claims
- 4558US2024154062A1Multi-Period Patterned SubstrateSENSOR ELECTRONIC TECH INC·Filed 2023·Application pending·0 cites
- 4657US10243100B2Semiconductor layer including compositional inhomogeneitiesSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Mar 26, 2019·0 cites·20 claims
- 4756US10297460B2Stress relieving semiconductor layerSENSOR ELECTRONIC TECH INC·Filed 2017·Granted May 21, 2019·0 cites·20 claims
- 4856US10050175B2Patterned layer design for group III nitride layer growthSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 4955US10615307B2Semiconductor structure with inhomogeneous regionsSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Apr 7, 2020·0 cites·20 claims
- 5054US10199531B2Semiconductor heterostructure with stress managementSENSOR ELECTRONIC TECH INC·Filed 2017·Granted Feb 5, 2019·0 cites·20 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →