Inventor · disambiguated record
Rajarao Jammy
Also filed as: JAMMY RAJARAO
77 granted patents·17 pending applications·2,360 citations·filing 1998–2012
99Inventor score
Top patents by PatentIndex Score
94 records- 0199US7030481B2High density chip carrier with integrated passive devicesIBM·Filed 2002·Granted Apr 18, 2006·401 cites·52 claims
- 0299US6962872B2High density chip carrier with integrated passive devicesIBM·Filed 2004·Granted Nov 8, 2005·363 cites·29 claims
- 0397US7105889B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2004·Granted Sep 12, 2006·93 cites·26 claims
- 0494US6399490B1Highly conformal titanium nitride deposition process for high aspect ratio structuresIBM·Filed 2000·Granted Jun 4, 2002·104 cites·22 claims
- 0593US6653678B2Reduction of polysilicon stress in trench capacitorsIBM·Filed 2001·Granted Nov 25, 2003·47 cites·22 claims
- 0693US6268299B1Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeabilityIBM·Filed 2000·Granted Jul 31, 2001·78 cites·19 claims
- 0792US7750418B2Introduction of metal impurity to change workfunction of conductive electrodesIBM·Filed 2008·Granted Jul 6, 2010·18 cites·31 claims
- 0892US7598545B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2005·Granted Oct 6, 2009·20 cites·28 claims
- 0992US7452767B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectricsIBM·Filed 2006·Granted Nov 18, 2008·15 cites·4 claims
- 1092US7446380B2Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOSIBM·Filed 2005·Granted Nov 4, 2008·20 cites·15 claims
- 1192US6437381B1Semiconductor memory device with reduced orientation-dependent oxidation in trench structuresIBM·Filed 2000·Granted Aug 20, 2002·52 cites·13 claims
- 1291US8193051B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsBOJARCZUK JR NESTOR A·Filed 2011·Granted Jun 5, 2012·14 cites·11 claims
- 1391US7928514B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2009·Granted Apr 19, 2011·12 cites·16 claims
- 1491US7655994B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2005·Granted Feb 2, 2010·21 cites·19 claims
- 1591US7071122B2Field effect transistor with etched-back gate dielectricIBM·Filed 2003·Granted Jul 4, 2006·42 cites·16 claims
- 1691US6998666B2Nitrided STI liner oxide for reduced corner device impact on vertical device performanceIBM·Filed 2004·Granted Feb 14, 2006·46 cites·14 claims
- 1790US7479683B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectricsIBM·Filed 2004·Granted Jan 20, 2009·35 cites·17 claims
- 1890US7242055B2Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxideIBM·Filed 2004·Granted Jul 10, 2007·51 cites·34 claims
- 1990US6869860B2Filling high aspect ratio isolation structures with polysilazane based materialIBM·Filed 2003·Granted Mar 22, 2005·35 cites·10 claims
- 2089US7745278B2Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectricsIBM·Filed 2008·Granted Jun 29, 2010·10 cites·22 claims
- 2189US7091118B1Replacement metal gate transistor with metal-rich silicon layer and method for making the sameIBM·Filed 2004·Granted Aug 15, 2006·49 cites·19 claims
- 2288US7868410B2Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flowIBM·Filed 2008·Granted Jan 11, 2011·13 cites·7 claims
- 2388US7858500B2Low threshold voltage semiconductor device with dual threshold voltage control meansIBM·Filed 2008·Granted Dec 28, 2010·12 cites·20 claims
- 2488US7667278B2Metal carbide gate structure and method of fabricationIBM·Filed 2006·Granted Feb 23, 2010·11 cites·13 claims
- 2588US7425497B2Introduction of metal impurity to change workfunction of conductive electrodesIBM·Filed 2006·Granted Sep 16, 2008·14 cites·1 claims
- 2688US7064050B2Metal carbide gate structure and method of fabricationIBM·Filed 2003·Granted Jun 20, 2006·32 cites·17 claims
- 2787US6555430B1Process flow for capacitance enhancement in a DRAM trenchIBM·Filed 2000·Granted Apr 29, 2003·44 cites·16 claims
- 2887US6544874B2Method for forming junction on insulator (JOI) structureIBM·Filed 2001·Granted Apr 8, 2003·48 cites·36 claims
- 2986US6709926B2High performance logic and high density embedded dram with borderless contact and antispacerIBM·Filed 2002·Granted Mar 23, 2004·26 cites·12 claims
- 3086US6512266B1Method of fabricating SiO2 spacers and annealing capsIBM·Filed 2001·Granted Jan 28, 2003·40 cites·24 claims
- 3185US7368045B2Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flowIBM·Filed 2005·Granted May 6, 2008·10 cites·39 claims
- 3285US6872620B2Trench capacitors with reduced polysilicon stressIBM·Filed 2003·Granted Mar 29, 2005·24 cites·23 claims
- 3384US6746933B1Pitcher-shaped active area for field effect transistor and method of forming sameIBM·Filed 2001·Granted Jun 8, 2004·35 cites·12 claims
- 3483US7671421B2CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materialsIBM·Filed 2006·Granted Mar 2, 2010·8 cites·13 claims
- 3582US6444516B1Semi-insulating diffusion barrier for low-resistivity gate conductorsIBM·Filed 2000·Granted Sep 3, 2002·31 cites·20 claims
- 3681US8158481B2CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materialsCHEN TZE-CHIANG·Filed 2010·Granted Apr 17, 2012·5 cites·8 claims
- 3781US7999323B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2009·Granted Aug 16, 2011·7 cites·18 claims
- 3881US6222218B1DRAM trenchIBM·Filed 1998·Granted Apr 24, 2001·37 cites·8 claims
- 3980US6936512B2Semiconductor method and structure for simultaneously forming a trench capacitor dielectric and trench sidewall device dielectricIBM·Filed 2002·Granted Aug 30, 2005·23 cites·20 claims
- 4079US7271455B2Formation of fully silicided metal gate using dual self-aligned silicide processIBM·Filed 2004·Granted Sep 18, 2007·20 cites·9 claims
- 4179US6724088B1Quantum conductive barrier for contact to shallow diffusion regionIBM·Filed 1999·Granted Apr 20, 2004·52 cites·9 claims
- 4277US6873010B2High performance logic and high density embedded dram with borderless contact and antispacerIBM·Filed 2003·Granted Mar 29, 2005·14 cites·3 claims
- 4377US6620724B1Low resistivity deep trench fill for DRAM and EDRAM applicationsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 16, 2003·23 cites·38 claims
- 4475US7115959B2Method of forming metal/high-k gate stacks with high mobilityIBM·Filed 2004·Granted Oct 3, 2006·17 cites·26 claims
- 4575US6664161B2Method and structure for salicide trench capacitor plate electrodeIBM·Filed 2002·Granted Dec 16, 2003·19 cites·11 claims
- 4675US6177696B1Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devicesIBM·Filed 1998·Granted Jan 23, 2001·44 cites·33 claims
- 4774US7479684B2Field effect transistor including damascene gate with an internal spacer structureIBM·Filed 2004·Granted Jan 20, 2009·13 cites·20 claims
- 4874US6579759B1Formation of self-aligned buried strap connectorIBM·Filed 2002·Granted Jun 17, 2003·19 cites·10 claims
- 4973US6583462B1Vertical DRAM having metallic node conductorIBM·Filed 2000·Granted Jun 24, 2003·14 cites·11 claims
- 5073US6404000B1Pedestal collar structure for higher charge retention time in trench-type DRAM cellsIBM·Filed 2000·Granted Jun 11, 2002·17 cites·19 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Rajarao Jammy files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →