Inventor · disambiguated record
Raseong Kim
Also filed as: KIM RASEONG
16 granted patents·21 pending applications·22 citations·filing 2012–2024
88Inventor score
Top patents by PatentIndex Score
37 records- 0185US9294035B2Multigate resonant channel transistorINTEL CORP·Filed 2013·Granted Mar 22, 2016·6 cites·25 claims
- 0279US11605624B2Ferroelectric resonatorINTEL CORP·Filed 2019·Granted Mar 14, 2023·2 cites·25 claims
- 0379US9577060B2Piezoresistive resonator with multi-gate transistorINTEL CORP·Filed 2013·Granted Feb 21, 2017·5 cites·27 claims
- 0474US12113117B2Piezo-resistive transistor based resonator with ferroelectric gate dielectricINTEL CORP·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0572US8963135B2Integrated circuits and systems and methods for producing the sameINTEL CORP·Filed 2012·Granted Feb 24, 2015·9 cites·9 claims
- 0670US12125893B2Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectricINTEL CORP·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 0760US12406713B2Probabilistic computing devices based on stochastic switching in a ferroelectric field-effect transistorINTEL CORP·Filed 2021·Granted Sep 2, 2025·0 cites·24 claims
- 0860US2025311310A1Planar ferroelectric majority gatesINTEL CORP·Filed 2024·Application pending·0 cites
- 0959US2025393290A1Ferroelectric field effect transistors (fefets) with relaxor ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 1058US9947805B2Nanowire-based mechanical switching deviceINTEL CORP·Filed 2016·Granted Apr 17, 2018·0 cites·19 claims
- 1157US11646356B2Piezo-resistive transistor based resonator with anti-ferroelectric gate dielectricINTEL CORP·Filed 2019·Granted May 9, 2023·0 cites·20 claims
- 1257US11637191B2Piezo-resistive transistor based resonator with ferroelectric gate dielectricINTEL CORP·Filed 2019·Granted Apr 25, 2023·0 cites·25 claims
- 1357US2025311376A1Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 1456US2025380487A1Ferroelectric field effect transistors (fefets) with improper ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 1556US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 1655US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 1754US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 1853US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1953US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 2053US2025006841A1Technologies for barrier layers in perovskite transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 2152US12445092B2Piezo-resistive resonator device having drive and sense transistors with wells of opposite dopingINTEL CORP·Filed 2021·Granted Oct 14, 2025·0 cites·25 claims
- 2252US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 2351US2024113220A1Technologies for transistors with a thin-film ferroelectricINTEL CORP·Filed 2022·Application pending·0 cites
- 2451US2023352584A1Technologies for transistors with a ferroelectric gate dielectricNIKONOV DMITRI EVGENIEVICH·Filed 2022·Application pending·0 cites
- 2550US2024105810A1Vertical ferrorelectric field-effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 2650US2024097031A1Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilitiesINTEL CORP·Filed 2022·Application pending·0 cites
- 2748US10522683B2Transistors with ballistic or quasi-ballistic carrier behavior and low resistance in source and drain nodesINTEL CORP·Filed 2018·Granted Dec 31, 2019·0 cites·23 claims
- 2848US9374162B2Semiconductor package with optical portINTEL CORP·Filed 2012·Granted Jun 21, 2016·0 cites·23 claims
- 2948US9362074B2Nanowire-based mechanical switching devicePAWASHE CHYTRA·Filed 2013·Granted Jun 7, 2016·0 cites·24 claims
- 3048US2017345896A1Field effect transistor structures using germanium nanowiresINTEL CORP·Filed 2014·Application pending·0 cites
- 3148US2023057992A1Gallium nitride (gan) integrated circuit technology with resonatorsINTEL CORP·Filed 2021·Application pending·0 cites
- 3245US10263036B2Strain assisted spin torque switching spin transfer torque memoryINTEL CORP·Filed 2014·Granted Apr 16, 2019·0 cites·20 claims
- 3343US10457548B2Integrating MEMS structures with interconnects and viasINTEL CORP·Filed 2015·Granted Oct 29, 2019·0 cites·21 claims
- 3440US2016056278A1Tunneling field effect transistors (tfets) with undoped drain underlap wrap-around regionsINTEL CORP·Filed 2013·Application pending·0 cites
- 3540US2020162024A1Piezoresistive self-oscillatorINTEL CORP·Filed 2018·Application pending·0 cites
- 3640US2014168263A1Consumer electronics with an invisible appearanceAVCI UYGAR E·Filed 2012·Application pending·0 cites
- 3735US2019081044A1Semiconductor device having sub regions to define threshold voltagesINTEL CORP·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →