Inventor · disambiguated record
Randy J. Koval
Also filed as: KOVAL RANDY J · Koval Randy
22 granted patents·4 pending applications·186 citations·filing 2011–2023
94Inventor score
Top patents by PatentIndex Score
26 records- 0196US9666449B2Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formationKOVAL RANDY J·Filed 2014·Granted May 30, 2017·113 cites·19 claims
- 0293US10825831B1Non-volatile memory with storage nodes having a radius of curvatureINTEL CORP·Filed 2019·Granted Nov 3, 2020·15 cites·21 claims
- 0393US8878279B2Self-aligned floating gate in a vertical memory structureINTEL CORP·Filed 2012·Granted Nov 4, 2014·11 cites·14 claims
- 0491US9196625B2Self-aligned floating gate in a vertical memory structureINTEL CORP·Filed 2014·Granted Nov 24, 2015·8 cites·5 claims
- 0590US11088168B2Semiconductor devices and methods of fabricationMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 10, 2021·2 cites·14 claims
- 0688US9443864B2Self-aligned floating gate in a vertical memory structureINTEL CORP·Filed 2015·Granted Sep 13, 2016·4 cites·16 claims
- 0786US9722074B2Local buried channel dielectric for vertical NAND performance enhancement and vertical scalingINTEL CORP·Filed 2015·Granted Aug 1, 2017·4 cites·20 claims
- 0886US9698022B2Self-aligned floating gate in a vertical memory structureINTEL CORP·Filed 2016·Granted Jul 4, 2017·3 cites·16 claims
- 0986US9190490B2Local buried channel dielectric for vertical NAND performance enhancement and vertical scalingINTEL CORP·Filed 2013·Granted Nov 17, 2015·7 cites·18 claims
- 1085US10038002B2Semiconductor devices and methods of fabricationMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 31, 2018·3 cites·6 claims
- 1182US10608004B2Semiconductor devices and methods of fabricationMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 31, 2020·2 cites·8 claims
- 1280US10128262B2Vertical memory having varying storage cell design through the storage cell stackINTEL CORP·Filed 2015·Granted Nov 13, 2018·3 cites·19 claims
- 1375US11037633B2Methods and apparatuses including an asymmetric assist deviceMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 15, 2021·2 cites·26 claims
- 1474US11626424B2Semiconductor devices and methods of fabricationMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 1574US9875801B2Methods and apparatuses including an asymmetric assist deviceMICRON TECHNOLOGY INC·Filed 2014·Granted Jan 23, 2018·3 cites·20 claims
- 1672US10297325B2Methods and apparatuses including an asymmetric assist deviceMICRON TECHNOLOGY INC·Filed 2018·Granted May 21, 2019·2 cites·20 claims
- 1769US10622450B2Modified floating gate and dielectric layer geometry in 3D memory arraysINTEL CORP·Filed 2018·Granted Apr 14, 2020·1 cites·15 claims
- 1869US9082714B2Use of etch process post wordline definition to improve data retention in a flash memory deviceKOVAL RANDY J·Filed 2011·Granted Jul 14, 2015·3 cites·5 claims
- 1968US11798633B2Methods and apparatuses including an asymmetric assist deviceMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 24, 2023·0 cites·15 claims
- 2063US12484225B2Metal hybrid charge storage structure for memoryIntel NDTM US LLC·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
- 2157US12424483B23D NAND with inter-wordline airgapIntel NDTM US LLC·Filed 2021·Granted Sep 23, 2025·0 cites·14 claims
- 2254US9953842B2Methods of forming a portion of a memory array having a conductor having a variable concentration of germaniumMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 24, 2018·0 cites·20 claims
- 2353US2024008270A1Floating gate nand cell – methods and approaches for fabricationIntel NDTM US LLC·Filed 2023·Application pending·0 cites
- 2451US2023282578A1Engineered dielectric profile for high aspect-ratio 3d nand structuresIntel NDTM US LLC·Filed 2023·Application pending·0 cites
- 2546US2023232633A1Vertical wordline driver structures and methodsIntel NDTM US LLC·Filed 2023·Application pending·0 cites
- 2644US2022189987A1Vertical channel with conductive structures to improve string currentINTEL CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →