Inventor · disambiguated record
Ramachandran Muralidhar
Also filed as: MURALIDHAR RAMACHANDRAN
102 granted patents·15 pending applications·2,504 citations·filing 1998–2020
99Inventor score
Top patents by PatentIndex Score
117 records- 0199US7504302B2Process of forming a non-volatile memory cell including a capacitor structureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 17, 2009·241 cites·20 claims
- 0298US9201041B2Extended gate sensor for pH sensingIBM·Filed 2013·Granted Dec 1, 2015·57 cites·13 claims
- 0398US8525169B1Reliable physical unclonable function for device authenticationEDELSTEIN DANIEL C·Filed 2012·Granted Sep 3, 2013·115 cites·23 claims
- 0498US6297095B1Memory device that includes passivated nanoclusters and method for manufactureMOTOROLA INC·Filed 2000·Granted Oct 2, 2001·284 cites·17 claims
- 0597US6831310B1Integrated circuit having multiple memory types and method of formationFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 14, 2004·132 cites·20 claims
- 0697US6320784B1Memory cell and method for programming thereofMOTOROLA INC·Filed 2000·Granted Nov 20, 2001·180 cites·14 claims
- 0795US7947589B2FinFET formation with a thermal oxide spacer hard mask formed from crystalline silicon layerFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted May 24, 2011·28 cites·20 claims
- 0895US7719039B2Phase change memory structures including pillarsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 18, 2010·36 cites·20 claims
- 0995US6413819B1Memory device and method for using prefabricated isolated storage elementsMOTOROLA INC·Filed 2000·Granted Jul 2, 2002·128 cites·21 claims
- 1094US7416945B1Method for forming a split gate memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 26, 2008·35 cites·20 claims
- 1194US7352631B2Methods for programming a floating body nonvolatile memoryFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 1, 2008·27 cites·18 claims
- 1294US6344403B1Memory device and method for manufactureMOTOROLA INC·Filed 2000·Granted Feb 5, 2002·142 cites·7 claims
- 1394US6330184B1Method of operating a semiconductor deviceMOTOROLA INC·Filed 2000·Granted Dec 11, 2001·91 cites·7 claims
- 1493US9627378B2Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial claddingIBM·Filed 2015·Granted Apr 18, 2017·7 cites·15 claims
- 1593US8361847B2Stressed channel FET with source/drain buffersIBM·Filed 2011·Granted Jan 29, 2013·16 cites·15 claims
- 1693US7811886B2Split-gate thin film storage NVM cell with reduced load-up/trap-up effectsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 12, 2010·33 cites·18 claims
- 1793US7098502B2Transistor having three electrically isolated electrodes and method of formationFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 29, 2006·75 cites·37 claims
- 1892US10775258B2Heuristic based analytics for gas leak source identificationIBM·Filed 2018·Granted Sep 15, 2020·5 cites·18 claims
- 1992US8815684B2Bulk finFET with super steep retrograde wellIBM·Filed 2012·Granted Aug 26, 2014·12 cites·25 claims
- 2092US6808986B2Method of forming nanocrystals in a memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Oct 26, 2004·60 cites·15 claims
- 2192US6784103B1Method of formation of nanocrystals on a semiconductor structureFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 31, 2004·60 cites·23 claims
- 2291US9766220B2Leveraging air/water current variability for sensor network verification and source localizationIBM·Filed 2016·Granted Sep 19, 2017·3 cites·20 claims
- 2391US6903967B2Memory with charge storage locations and adjacent gate structuresFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 7, 2005·57 cites·38 claims
- 2490US10423805B2Encryption engine with an undetectable/tamper-proof private key in late node CMOS technologyIBM·Filed 2016·Granted Sep 24, 2019·5 cites·15 claims
- 2590US10345317B2Biosensors including surface resonance spectroscopy and semiconductor devicesIBM·Filed 2017·Granted Jul 9, 2019·3 cites·10 claims
- 2690US9714952B2Biosensors including surface resonance spectroscopy and semiconductor devicesIBM·Filed 2014·Granted Jul 25, 2017·7 cites·11 claims
- 2790US7517747B2Nanocrystal non-volatile memory cell and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 14, 2009·15 cites·13 claims
- 2890US7361567B2Non-volatile nanocrystal memory and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 22, 2008·16 cites·20 claims
- 2990US6307782B1Process for operating a semiconductor deviceMOTOROLA INC·Filed 2000·Granted Oct 23, 2001·57 cites·20 claims
- 3090US6172905B1Method of operating a semiconductor deviceMOTOROLA INC·Filed 2000·Granted Jan 9, 2001·53 cites·3 claims
- 3189US11079366B2Plume characterization using synchronized measurements of gas composition, wind direction, and wind speedIBM·Filed 2018·Granted Aug 3, 2021·3 cites·10 claims
- 3289US10468432B1BEOL cross-bar array ferroelectric synapse units for domain wall movementIBM·Filed 2018·Granted Nov 5, 2019·7 cites·20 claims
- 3389US7932189B2Process of forming an electronic device including a layer of discontinuous storage elementsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Apr 26, 2011·16 cites·20 claims
- 3489US7241695B2Semiconductor device having nano-pillars and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 10, 2007·14 cites·19 claims
- 3589US6958265B2Semiconductor device with nanoclustersFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 25, 2005·48 cites·45 claims
- 3688US11410891B2Anomaly detection and remedial recommendationIBM·Filed 2019·Granted Aug 9, 2022·5 cites·15 claims
- 3788US10481141B2Leveraging air/water current variability for sensor network verification and source localizationIBM·Filed 2017·Granted Nov 19, 2019·2 cites·20 claims
- 3888US6991984B2Method for forming a memory structure using a modified surface topography and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 31, 2006·44 cites·27 claims
- 3988US6967143B2Semiconductor fabrication process with asymmetrical conductive spacersFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Nov 22, 2005·31 cites·14 claims
- 4087US8043888B2Phase change memory cell with heater and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 25, 2011·16 cites·4 claims
- 4187US7018876B2Transistor with vertical dielectric structureFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 28, 2006·41 cites·33 claims
- 4286US10121786B2FinFET with U-shaped channel and S/D epitaxial cladding extending under gate spacersIBM·Filed 2017·Granted Nov 6, 2018·3 cites·5 claims
- 4385US8809872B2Bulk finFET with super steep retrograde wellIBM·Filed 2013·Granted Aug 19, 2014·7 cites·8 claims
- 4485US8354313B2Method to optimize work function in complementary metal oxide semiconductor (CMOS) structuresIBM·Filed 2010·Granted Jan 15, 2013·8 cites·12 claims
- 4584US7445984B2Method for removing nanoclusters from selected regionsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Nov 4, 2008·10 cites·13 claims
- 4684US7186616B2Method of removing nanoclusters in a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Mar 6, 2007·9 cites·14 claims
- 4783US7432158B1Method for retaining nanocluster size and electrical characteristics during processingFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 7, 2008·11 cites·19 claims
- 4883US7091130B1Method of forming a nanocluster charge storage deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 15, 2006·32 cites·22 claims
- 4982US7361543B2Method of forming a nanocluster charge storage deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Apr 22, 2008·24 cites·21 claims
- 5081US8541814B2Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacersCHIDAMBARRAO DURESETI·Filed 2011·Granted Sep 24, 2013·4 cites·8 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →