Inventor · disambiguated record
Rajiv Patel
Also filed as: PATEL RAJIV · PATEL RAJIV L
7 granted patents·2 pending applications·158 citations·filing 1999–2008
87Inventor score
Top patents by PatentIndex Score
9 records- 0189US6680243B1Shallow junction formationLSI LOGIC CORP·Filed 2001·Granted Jan 20, 2004·59 cites·13 claims
- 0286US6521549B1Method of reducing silicon oxynitride gate insulator thickness in some transistors of a hybrid integrated circuit to obtain increased differential in gate insulator thickness with other transistors of the hybrid circuitLSI LOGIC CORP·Filed 2000·Granted Feb 18, 2003·39 cites·21 claims
- 0368US6436845B1Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuitLSI LOGIC CORP·Filed 2000·Granted Aug 20, 2002·13 cites·23 claims
- 0463US6562729B2Silicon nitride and silicon dioxide gate insulator transistors and method of forming same in a hybrid integrated circuitLSI LOGIC CORP·Filed 2002·Granted May 13, 2003·9 cites·4 claims
- 0562US2008296143A1Plasma Systems with Magnetic Filter Devices to Alter Film Deposition/Etching CharacteristicsMAXIM INTEGRATED PRODUCTS·Filed 2008·Application pending·0 cites
- 0660US6586814B1Etch resistant shallow trench isolation in a semiconductor waferLSI LOGIC CORP·Filed 2000·Granted Jul 1, 2003·11 cites·11 claims
- 0758US6335295B1Flame-free wet oxidationLSI LOGIC CORP·Filed 1999·Granted Jan 1, 2002·22 cites·15 claims
- 0856US2007246354A1Plasma systems with magnetic filter devices to alter film deposition/etching characteristicsMAXIM INTEGRATED PRODUCTS·Filed 2006·Application pending·0 cites
- 0955US6656805B2Method of reducing silicon oxynitride gate insulator thickness in some transistors of a hybrid integrated circuit to obtain increased differential in gate insulator thickness with other transistors of the hybrid circuitLSI LOGIC CORP·Filed 2002·Granted Dec 2, 2003·5 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →