Inventor · disambiguated record
Rainer Pelzer
Also filed as: PELZER RAINER
10 granted patents·1 pending application·5 citations·filing 2012–2020
79Inventor score
Technology areasH10W
Top patents by PatentIndex Score
11 records- 0182US10304782B2Compressive interlayer having a defined crack-stop edge extensionINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 28, 2019·4 cites·28 claims
- 0266US11239188B2Terminal structure of a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 1, 2022·1 cites·13 claims
- 0357US10978395B2Method of manufacturing a semiconductor device having a power metallization structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 13, 2021·0 cites·18 claims
- 0453US10700019B2Semiconductor device with compressive interlayerINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 30, 2020·0 cites·27 claims
- 0551US11488921B2Multi-chip device, method of manufacturing a multi-chip device, and method of forming a metal interconnectINFINEON TECHNOLOGIES AG·Filed 2020·Granted Nov 1, 2022·0 cites·26 claims
- 0651US10734320B2Power metallization structure for semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 4, 2020·0 cites·18 claims
- 0746US11276624B2Semiconductor device power metallization layer with stress-relieving heat sink structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 15, 2022·0 cites·13 claims
- 0846US8884407B2Devices for providing an electrical connectionINFINEON TECHNOLOGIES AG·Filed 2012·Granted Nov 11, 2014·0 cites·18 claims
- 0943US11127693B2Barrier for power metallization in semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 1036US11031321B2Semiconductor device having a die pad with a dam-like configurationINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 8, 2021·0 cites·20 claims
- 1130US2017053879A1Method, a semiconductor device and a layer arrangementINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →