Inventor · disambiguated record
Ravi Pillarisetty
Also filed as: PILLARISETTY RAVI
395 granted patents·61 pending applications·2,004 citations·filing 2007–2025
99Inventor score
Top patents by PatentIndex Score
456 records- 0199US10565515B2Quantum circuit assemblies with triaxial cablesINTEL CORP·Filed 2018·Granted Feb 18, 2020·47 cites·25 claims
- 0299US8987794B2Non-planar gate all-around device and method of fabrication thereofRACHMADY WILLY·Filed 2011·Granted Mar 24, 2015·65 cites·29 claims
- 0399US7825437B2Unity beta ratio tri-gate transistor static random access memory (SRAM)INTEL CORP·Filed 2007·Granted Nov 2, 2010·166 cites·17 claims
- 0498US9123567B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureRADOSAVLJEVIC MARKO·Filed 2011·Granted Sep 1, 2015·66 cites·26 claims
- 0598US8890264B2Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interfaceDEWEY GILBERT·Filed 2012·Granted Nov 18, 2014·95 cites·13 claims
- 0698US8283653B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2009·Granted Oct 9, 2012·47 cites·20 claims
- 0797US10763349B2Quantum dot devices with modulation doped stacksINTEL CORP·Filed 2016·Granted Sep 1, 2020·18 cites·25 claims
- 0897US9252275B2Non-planar gate all-around device and method of fabrication thereofINTEL CORP·Filed 2014·Granted Feb 2, 2016·20 cites·19 claims
- 0997US9240410B2Group III-N nanowire transistorsTHEN HAN WUI·Filed 2011·Granted Jan 19, 2016·25 cites·17 claims
- 1097US8901537B2Transistors with high concentration of boron doped germaniumMURTHY ANAND S·Filed 2010·Granted Dec 2, 2014·56 cites·25 claims
- 1197US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 1297US8748940B1Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2012·Granted Jun 10, 2014·35 cites·20 claims
- 1397US8575596B2Non-planar germanium quantum well devicesPILLARISETTY RAVI·Filed 2012·Granted Nov 5, 2013·24 cites·14 claims
- 1497US7851790B2Isolated Germanium nanowire on Silicon finINTEL CORP·Filed 2008·Granted Dec 14, 2010·43 cites·3 claims
- 1596US10804399B2Double-sided quantum dot devicesINTEL CORP·Filed 2016·Granted Oct 13, 2020·17 cites·17 claims
- 1696US10038054B2Variable gate width for gate all-around transistorsINTEL CORP·Filed 2017·Granted Jul 31, 2018·14 cites·15 claims
- 1796US9627384B2Transistors with high concentration of boron doped germaniumINTEL CORP·Filed 2014·Granted Apr 18, 2017·12 cites·20 claims
- 1896US9209290B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 8, 2015·11 cites·14 claims
- 1996US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 2096US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 2196US8575653B2Non-planar quantum well device having interfacial layer and method of forming sameRACHMADY WILLY·Filed 2010·Granted Nov 5, 2013·21 cites·30 claims
- 2296US7947971B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2010·Granted May 24, 2011·24 cites·10 claims
- 2395US11990516B1Quantum dot devices with independent gate controlINTEL CORP·Filed 2021·Granted May 21, 2024·4 cites·20 claims
- 2495US10439134B2Techniques for forming non-planar resistive memory cellsINTEL CORP·Filed 2014·Granted Oct 8, 2019·12 cites·21 claims
- 2595US9653680B2Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devicesINTEL CORP·Filed 2015·Granted May 16, 2017·11 cites·6 claims
- 2695US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 2795US9590089B2Variable gate width for gate all-around transistorsRACHMADY WILLY·Filed 2011·Granted Mar 7, 2017·18 cites·16 claims
- 2895US9530878B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2015·Granted Dec 27, 2016·8 cites·14 claims
- 2995US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 3095US9245989B2High voltage field effect transistorsTHEN HAN WUI·Filed 2011·Granted Jan 26, 2016·17 cites·20 claims
- 3195US8823059B2Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stackDEWEY GILBERT·Filed 2012·Granted Sep 2, 2014·15 cites·31 claims
- 3295US7759142B1Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2008·Granted Jul 20, 2010·29 cites·17 claims
- 3394US11011693B2Integrated quantum circuit assemblies for cooling apparatusINTEL CORP·Filed 2019·Granted May 18, 2021·11 cites·20 claims
- 3494US10665769B2Quantum circuit assemblies with vertically-stacked parallel-plate capacitorsINTEL CORP·Filed 2018·Granted May 26, 2020·10 cites·24 claims
- 3594US10418487B2Non-planar gate all-around device and method of fabrication thereofINTEL CORP·Filed 2015·Granted Sep 17, 2019·9 cites·16 claims
- 3694US10084058B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2016·Granted Sep 25, 2018·7 cites·14 claims
- 3794US9755062B2III-N material structure for gate-recessed transistorsINTEL CORP·Filed 2016·Granted Sep 5, 2017·7 cites·20 claims
- 3894US9397188B2Group III-N nanowire transistorsINTEL CORP·Filed 2015·Granted Jul 19, 2016·7 cites·8 claims
- 3994US9306068B2Stain compensation in transistorsINTEL CORP·Filed 2015·Granted Apr 5, 2016·7 cites·20 claims
- 4094US8258498B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2011·Granted Sep 4, 2012·15 cites·17 claims
- 4194US8120073B2Trigate transistor having extended metal gate electrodeRAKSHIT TITASH·Filed 2008·Granted Feb 21, 2012·35 cites·12 claims
- 4293US11387320B2Transistors with high concentration of germaniumINTEL CORP·Filed 2019·Granted Jul 12, 2022·3 cites·20 claims
- 4393US10803396B2Quantum circuit assemblies with Josephson junctions utilizing resistive switching materialsINTEL CORP·Filed 2018·Granted Oct 13, 2020·8 cites·25 claims
- 4493US10658471B2Transition metal dichalcogenides (TMDCS) over III-nitride heteroepitaxial layersINTEL CORP·Filed 2015·Granted May 19, 2020·8 cites·18 claims
- 4593US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 4693US9461160B2Non-planar III-N transistorTHEN HAN WUI·Filed 2011·Granted Oct 4, 2016·13 cites·10 claims
- 4793US8987091B2III-N material structure for gate-recessed transistorsTHEN HAN WUI·Filed 2011·Granted Mar 24, 2015·11 cites·21 claims
- 4893US8148772B2Recessed channel array transistor (RCAT) structuresDOYLE BRIAN S·Filed 2011·Granted Apr 3, 2012·14 cites·14 claims
- 4993US7964490B2Methods of forming nickel sulfide film on a semiconductor deviceINTEL CORP·Filed 2008·Granted Jun 21, 2011·19 cites·28 claims
- 5092US10770545B2Quantum dot devicesINTEL CORP·Filed 2016·Granted Sep 8, 2020·6 cites·19 claims
Showing the top 50 of 456 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →