Inventor · disambiguated record
Rahul R. Potera
Also filed as: POTERA RAHUL · POTERA RAHUL R
12 granted patents·24 pending applications·32 citations·filing 2019–2024
86Inventor score
Top patents by PatentIndex Score
36 records- 0195US11631762B1Planar MOSFET with reduced sensitivity of JFET resistance to process variationSEMIQ INCORPORATED·Filed 2021·Granted Apr 18, 2023·8 cites·19 claims
- 0295US11152503B1Silicon carbide MOSFET with wave-shaped channel regionsSEMIQ INCORPORATED·Filed 2020·Granted Oct 19, 2021·9 cites·21 claims
- 0389US10950695B1Silicon carbide planar MOSFET with wave-shaped channel regionsGLOBAL POWER TECH GROUP INC·Filed 2019·Granted Mar 16, 2021·12 cites·20 claims
- 0487US11410990B1Silicon carbide MOSFET with optional asymmetric gate clampSEMIQ INCORPORATED·Filed 2020·Granted Aug 9, 2022·2 cites·16 claims
- 0577US11749758B1Silicon carbide junction barrier schottky diode with wave-shaped regionsSEMIQ INCORPORATED·Filed 2020·Granted Sep 5, 2023·1 cites·18 claims
- 0667US11728440B2Counter-doped silicon carbide Schottky barrier diodeSEMIQ INCORPORATED·Filed 2021·Granted Aug 15, 2023·0 cites·8 claims
- 0767US11631773B2Counter-doped silicon carbide Schottky barrier diodeSEMIQ INCORPORATED·Filed 2021·Granted Apr 18, 2023·0 cites·6 claims
- 0865US11756954B2Silicon carbide MOSFET with optional asymmetric gate clampSEMIQ INCORPORATED·Filed 2022·Granted Sep 12, 2023·0 cites·9 claims
- 0963US11469333B1Counter-doped silicon carbide Schottky barrier diodeSEMIQ INCORPORATED·Filed 2020·Granted Oct 11, 2022·0 cites·5 claims
- 1061US12446300B2Semiconductor devices having on-chip gate resistorsWOLFSPEED INC·Filed 2022·Granted Oct 14, 2025·0 cites·19 claims
- 1160US2025380467A1Trench based semiconductor devices with heterojunction gateWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 1260US2025324679A1Vertical jfet semiconductor devices with localized avalanche breakdownWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 1359US2025293152A1Vertical jfet semiconductor devices with avalanche current ballast resistanceWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 1458US2025359274A1Semiconductor devices with gate bus layouts for handling unclamped inductive switching currentWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 1558US2025324680A1Gate trench power semiconductor devices having enhanced avalanche robustness and methods of forming such devicesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 1658US2025203960A1Asymmetric edge terminationWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 1757US2025220982A1Monolithic bidirectional jfet switchWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 1856US12439664B2Methods of forming ohmic contacts on semiconductor devices with trench/mesa structuresWOLFSPEED INC·Filed 2022·Granted Oct 7, 2025·0 cites·28 claims
- 1956US2025338571A1Trench gate wide bandgap junction field effect transistors with termination regions having planar upper surfacesWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2056US2025248079A1Sic vjfet with edge termination for dual tilted gate implantsWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2156US2023418319A1Semiconductor transistors having minimum gate-to-source voltage clamp circuitsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2255US11605713B2Silicon carbide planar MOSFET with wave-shaped channel regionsSEMIQ INCORPORATED·Filed 2021·Granted Mar 14, 2023·0 cites·18 claims
- 2355US2025386569A1Trench based semiconductor devices with increased planarityWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 2455US2024355897A1Semiconductor devices with low barrier height schottky contactsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2554US2024429272A1Silicon carbide semiconductor devices with superjunctionsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2654US2025113531A1Power silicon carbide based semiconductor devices with selective jfet implants that are self-aligned with the well regions and methods of making such devicesWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 2753US2024321647A1Semiconductor devices with integrated test areasWOFLSPEED INC·Filed 2023·Application pending·0 cites
- 2853US2024421192A1Silicon carbide device with single metallization process for ohmic and schottky contactsWOFLSPEED INC·Filed 2023·Application pending·0 cites
- 2953US2024113235A1Silicon carbide device with single metallization process for ohmic and schottky contactsWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 3052US2023420575A1Methods of forming uniformly doped deep implanted regions in silicon carbide and silicon carbide layers including uniformly doped implanted regionsWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 3151US2024321651A1Semiconductor devices with integrated test structuresWOFLSPEED INC·Filed 2023·Application pending·0 cites
- 3251US2024234495A1Gate trench power semiconductor devices having self-aligned trench shielding regions and related methodsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3349US2025294865A1Semiconductor devices having intrinsic gate-to-drain capacitances that are only partly in series with a gate resistorWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 3448US2025107169A1Protection of mesa edges in semiconductor devicesWOFLSPEED INC·Filed 2023·Application pending·0 cites
- 3546US2024145537A1Semiconductor devices with additional mesa structures for reduced surface roughnessWOLFSPEED INC·Filed 2022·Application pending·0 cites
- 3646US2023327026A1Power semiconductor device with shallow conduction regionWOLFSPEED INC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →