Inventor · disambiguated record
Ralf Rudolf
Also filed as: RUDOLF RALF
11 granted patents·9 pending applications·190 citations·filing 2002–2025
85Inventor score
Files withINFINEON TECHNOLOGIES AG5INFINEON TECHNOLOGIES AUSTRIA AG5INFINEON TECHNOLOGIES DRESDEN GMBH3INFINEON TECH DRESDEN GMBH & CO KG2BOGUSZEWICS REMIGIUSZ V1
Top patents by PatentIndex Score
20 records- 0190US8598655B1Semiconductor device and method for manufacturing a semiconductor deviceSCHLOESSER TILL·Filed 2012·Granted Dec 3, 2013·14 cites·20 claims
- 0289US6693327B2Lateral semiconductor component in thin-film SOI technologyEUPEC GMBH & CO KG·Filed 2002·Granted Feb 17, 2004·170 cites·15 claims
- 0372US10581429B2Electronic circuit with several electronic switches connected in series and a drive circuitINFINEON TECH DRESDEN GMBH & CO KG·Filed 2018·Granted Mar 3, 2020·2 cites·18 claims
- 0469US8686505B2Lateral semiconductor device and manufacturing method thereforSTRASSER MARC·Filed 2012·Granted Apr 1, 2014·4 cites·25 claims
- 0561US2025120117A1Field effect transistor having a trench gate structureINFINEON TECH DRESDEN GMBH & CO KG·Filed 2024·Application pending·0 cites
- 0658US12471308B2Semiconductor-on-insulator device with lightly doped extension regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Nov 11, 2025·0 cites·17 claims
- 0757US2025380475A1Semiconductor device with a first isolation trench and a second isolation trench and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 0855US2024304627A1High voltage semiconductor device with data transmission from a high voltage domain to a low voltage domainINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 0950US2024290882A1Semiconductor device having silicon plugs for trench and/or mesa segmentationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 1048US2024363700A1Semiconductor device having a field plate structureINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 1147US9000520B2Semiconductor device with an insulating structure for insulating an electrode from a semiconductor bodyINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2014·Granted Apr 7, 2015·0 cites·10 claims
- 1246US9406550B2Insulation structure formed in a semiconductor substrate and method for forming an insulation structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Aug 2, 2016·0 cites·24 claims
- 1343US10546920B2Semiconductor device having a buried layerINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jan 28, 2020·0 cites·17 claims
- 1442US9899470B2Method for forming a power semiconductor device and a power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 20, 2018·0 cites·20 claims
- 1542US2019312114A1Semiconductor Device with Trench Structure and Production MethodINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
- 1639US7554157B2Lateral SOI component having a reduced on resistanceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 30, 2009·0 cites·20 claims
- 1736US10468248B2Method for producing a self-aligning masking layerINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 5, 2019·0 cites·16 claims
- 1835US2007075367A1SOI semiconductor component with increased dielectric strengthBOGUSZEWICS REMIGIUSZ V·Filed 2006·Application pending·0 cites
- 1935US2016343848A1Transistor Arrangement Including Power Transistors and Voltage Limiting MeansINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Application pending·0 cites
- 2035US2017040317A1Semiconductor Device with a Laterally Varying Doping Profile, and Method for Manufacturing ThereofINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →