Inventor · disambiguated record
Ravindra Soman
Also filed as: SOMAN RAVINDRA
8 granted patents·2 pending applications·280 citations·filing 2002–2005
89Inventor score
Top patents by PatentIndex Score
10 records- 0196US6812086B2Method of making a semiconductor transistorINTEL CORP·Filed 2002·Granted Nov 2, 2004·136 cites·22 claims
- 0288US6723622B2Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layerINTEL CORP·Filed 2002·Granted Apr 20, 2004·38 cites·18 claims
- 0386US7019326B2Transistor with strain-inducing structure in channelINTEL CORP·Filed 2003·Granted Mar 28, 2006·35 cites·15 claims
- 0486US6933589B2Method of making a semiconductor transistorINTEL CORP·Filed 2004·Granted Aug 23, 2005·32 cites·3 claims
- 0582US6927140B2Method for fabricating a bipolar transistor baseINTEL CORP·Filed 2002·Granted Aug 9, 2005·27 cites·19 claims
- 0657US7005359B2Bipolar junction transistor with improved extrinsic base region and method of fabricationINTEL CORP·Filed 2003·Granted Feb 28, 2006·6 cites·15 claims
- 0752US7517768B2Method for fabricating a heterojunction bipolar transistorINTEL CORP·Filed 2003·Granted Apr 14, 2009·6 cites·5 claims
- 0847US7473591B2Transistor with strain-inducing structure in channelINTEL CORP·Filed 2005·Granted Jan 6, 2009·0 cites·12 claims
- 0944US2006113634A1Bipolar junction transistor with improved extrinsic base region and method of fabricationAHMED SHAHRIAR·Filed 2005·Application pending·0 cites
- 1041US2003207127A1Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layerFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →