Inventor · disambiguated record
Randhir P. S. Thakur
Also filed as: THAKUR RANDHIR · THAKUR RANDHIR P S · THAKUR RANDHIR PS
26 granted patents·1 pending application·652 citations·filing 1993–2012
97Inventor score
Top patents by PatentIndex Score
27 records- 0197US6414376B1Method and apparatus for reducing isolation stress in integrated circuitsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 2, 2002·212 cites·35 claims
- 0288US6414364B2Isolation structure and process thereforMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 2, 2002·43 cites·39 claims
- 0386US6265282B1Process for making an isolation structureMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 24, 2001·74 cites·58 claims
- 0481US5416045AMethod for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin filmsMICRON TECHNOLOGY INC·Filed 1993·Granted May 16, 1995·76 cites·11 claims
- 0576US7235498B2Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3MICRON TECHNOLOGY INC·Filed 2005·Granted Jun 26, 2007·3 cites·12 claims
- 0675US6005801AReduced leakage DRAM storage unitMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 21, 1999·23 cites·25 claims
- 0771US6864125B2Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3MICRON TECHNOLOGY INC·Filed 2003·Granted Mar 8, 2005·9 cites·6 claims
- 0871US6051511AMethod and apparatus for reducing isolation stress in integrated circuitsMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 18, 2000·26 cites·20 claims
- 0968US5738909AMethod of forming high-integrity ultrathin oxidesMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 14, 1998·34 cites·24 claims
- 1067US7618901B2Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3MICRON TECHNOLOGY INC·Filed 2007·Granted Nov 17, 2009·1 cites·21 claims
- 1167US6172387B1Semiconductor interconnection structure and methodMICRON TECHNOLOGY INC·Filed 1998·Granted Jan 9, 2001·29 cites·40 claims
- 1265US5926742AControlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating sourceMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 20, 1999·24 cites·6 claims
- 1365USRE36050EMethod for repeatable temperature measurement using surface reflectivityMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 19, 1999·26 cites·21 claims
- 1459US6602798B1Method and apparatus for reducing isolation stress in integrated circuitsMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 5, 2003·4 cites·59 claims
- 1557US6607946B1Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3MICRON TECHNOLOGY INC·Filed 1998·Granted Aug 19, 2003·15 cites·6 claims
- 1657US5851929AControlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating sourceMICRON TECHNOLOGY INC·Filed 1996·Granted Dec 22, 1998·18 cites·7 claims
- 1754US6476433B1Semiconductor interconnection structure and methodMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 5, 2002·5 cites·17 claims
- 1853US9152562B2Storage sub-system for a computer comprising write-once memory devices and write-many memory devices and related methodSCHEUERLEIN ROY E·Filed 2012·Granted Oct 6, 2015·0 cites·19 claims
- 1953US6703690B2Apparatus for reducing isolation stress in integrated circuitsMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 9, 2004·2 cites·40 claims
- 2053US6157566AReduced leakage DRAM storage unitMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 5, 2000·7 cites·22 claims
- 2153US5973954AReduced leakage DRAM storage unitMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 26, 1999·9 cites·22 claims
- 2252US8275927B2Storage sub-system for a computer comprising write-once memory devices and write-many memory devices and related methodSCHEUERLEIN ROY E·Filed 2007·Granted Sep 25, 2012·0 cites·57 claims
- 2349US6157565AReduced leakage DRAM storage unitMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 5, 2000·7 cites·15 claims
- 2446US2006264007A1High quality oxide on an epitaxial layerMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 2539US7232728B1High quality oxide on an epitaxial layerMICRON TECHNOLOGY INC·Filed 1996·Granted Jun 19, 2007·5 cites·24 claims
- 2634US6404669B2Reduced leakage DRAM storage unitMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 11, 2002·0 cites·18 claims
- 2730US6181594B1Reduced leakage DRAM storage unitMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 30, 2001·0 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Randhir P. S. Thakur files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →