Inventor · disambiguated record
Raymond A. Turi
Also filed as: TURI RAYMOND A
39 granted patents·3,699 citations·filing 1982–2009
99Inventor score
Top patents by PatentIndex Score
39 records- 0199US6391688B1Method for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 2000·Granted May 21, 2002·336 cites·23 claims
- 0299US6104038AMethod for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 15, 2000·350 cites·13 claims
- 0399US5879955AMethod for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 1995·Granted Mar 9, 1999·468 cites·19 claims
- 0499US5831276AThree-dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 3, 1998·409 cites·30 claims
- 0598US6300684B1Method for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 9, 2001·220 cites·9 claims
- 0698US6111264ASmall pores defined by a disposable internal spacer for use in chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 29, 2000·417 cites·28 claims
- 0798US5985698AFabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·327 cites·19 claims
- 0898US5814527AMethod of making small pores defined by a disposable internal spacer for use in chalcogenide memoriesMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 29, 1998·560 cites·38 claims
- 0992US6787401B2Method of making vertical diode structuresMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 7, 2004·33 cites·23 claims
- 1092US6429449B1Three-dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 6, 2002·36 cites·50 claims
- 1191US6118135AThree-dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 12, 2000·53 cites·60 claims
- 1290US7170103B2Wafer with vertical diode structuresMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 30, 2007·9 cites·7 claims
- 1389US6653195B1Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 25, 2003·28 cites·42 claims
- 1489US5854102AVertical diode structures with low series resistanceMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 29, 1998·72 cites·19 claims
- 1586US6002140AMethod for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 1997·Granted Dec 14, 1999·54 cites·37 claims
- 1683US6740552B2Method of making vertical diode structuresMICRON TECHNOLOGY INC·Filed 2002·Granted May 25, 2004·15 cites·20 claims
- 1781US6534780B1Array of ultra-small pores for memory cellsMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 18, 2003·26 cites·10 claims
- 1880US6750091B1Diode formation methodMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 15, 2004·13 cites·20 claims
- 1980US4516313AUnified CMOS/SNOS semiconductor fabrication processNCR CO·Filed 1983·Granted May 14, 1985·33 cites·14 claims
- 2075US7279725B2Vertical diode structuresMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 9, 2007·2 cites·6 claims
- 2175US6376358B1Method of forming plugs and local interconnect for embedded memory/system-on-chip (SOC) applicationsMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 23, 2002·19 cites·28 claims
- 2275US4616245ADirect-write silicon nitride EEPROM cellNCR CO·Filed 1984·Granted Oct 7, 1986·28 cites·5 claims
- 2373US6194746B1Vertical diode structures with low series resistanceMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 27, 2001·28 cites·50 claims
- 2471US6677650B2Silicon plugs and local interconnect for embedded memory and system-on-chip (SOC) applicationsMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 13, 2004·15 cites·9 claims
- 2571US6444520B1Method of forming dual conductive plugsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 3, 2002·15 cites·1 claims
- 2670US8034716B2Semiconductor structures including vertical diode structures and methods for making the sameMICRON TECHNOLOGY INC·Filed 2009·Granted Oct 11, 2011·1 cites·19 claims
- 2768US6797978B2Method for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 28, 2004·12 cites·14 claims
- 2867US4683554ADirect write nonvolatile memory cellsNCR CO·Filed 1985·Granted Jul 28, 1987·27 cites·9 claims
- 2966US7166875B2Vertical diode structuresMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 23, 2007·5 cites·8 claims
- 3064US6784046B2Method of making vertical diode structuresMICRON TECHOLOGY INC·Filed 2002·Granted Aug 31, 2004·5 cites·20 claims
- 3161US6223432B1Method of forming dual conductive plugsMICRON TECHNOLOGY INC·Filed 1999·Granted May 1, 2001·22 cites·28 claims
- 3259US7563666B2Semiconductor structures including vertical diode structures and methods of making the sameMICRON TECHNOLOGY INC·Filed 2007·Granted Jul 21, 2009·0 cites·13 claims
- 3358US4748593AHigh speed nonvolatile memory cellNCR CO·Filed 1986·Granted May 31, 1988·17 cites·15 claims
- 3456US4473941AMethod of fabricating zener diodesNCR CO·Filed 1982·Granted Oct 2, 1984·20 cites·9 claims
- 3544US5168464ANonvolatile differential memory device and methodNCR CO·Filed 1989·Granted Dec 1, 1992·8 cites·25 claims
- 3642US4464824AEpitaxial contact fabrication processNCR CO·Filed 1982·Granted Aug 14, 1984·10 cites·10 claims
- 3739US6916710B2Method for fabricating an array of ultra-small pores for chalcogenide memory cellsMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 12, 2005·1 cites·15 claims
- 3837US4769788AShared line direct write nonvolatile memory cell arrayNCR CO·Filed 1986·Granted Sep 6, 1988·5 cites·12 claims
- 3933US6421282B1Cascade-booted programming voltage circuitMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 16, 2002·0 cites·33 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →