Inventor · disambiguated record
Raffaele Zambrano
Also filed as: ZAMBRANO RAFFAELE
73 granted patents·2 pending applications·967 citations·filing 1987–2004
99Inventor score
Files withCONS RIC MICROELETTRONICA28ST MICROELECTRONICS SRL26SGS THOMSON MICROELECTRONICS14CONSORZIO PER LA RICERA SULLA2ST MICROELECTRONICS INC2
Top patents by PatentIndex Score
75 records- 0186US5773899ABonding pad for a semiconductor chipCONS RIC MICROELETTRONICA·Filed 1996·Granted Jun 30, 1998·75 cites·6 claims
- 0281US5936298AMethod for realizing magnetic circuits in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Aug 10, 1999·67 cites·21 claims
- 0379US6627931B1Ferroelectric memory cell and corresponding manufacturing methodST MICROELECTRONICS SRL·Filed 2000·Granted Sep 30, 2003·17 cites·12 claims
- 0478US6300654B1Structure of a stacked memory cell, in particular a ferroelectric cellST MICROELECTRONICS SRL·Filed 1999·Granted Oct 9, 2001·32 cites·16 claims
- 0575US5426320AIntegrated structure protection device for protecting logic-level power MOS devices against electro-static dischargesCONSORZIO PER LA RICERA SULLA·Filed 1994·Granted Jun 20, 1995·37 cites·14 claims
- 0674US6034400AIntegrated circuit with improved electrostatic discharge protection including multi-level inductorST MICROELECTRONICS INC·Filed 1998·Granted Mar 7, 2000·30 cites·2 claims
- 0773US6579727B1Process for selectively sealing ferroelectric capacitive elements incorporated in semiconductor integrated non-volatile memory cellsST MICROELECTRONICS SRL·Filed 2000·Granted Jun 17, 2003·19 cites·22 claims
- 0872US5691555AIntegrated structure current sensing resistor for power devices particularly for overload self-protected power MOS devicesCONS RIC MICROELETTRONICA·Filed 1996·Granted Nov 25, 1997·34 cites·13 claims
- 0972US5565701AIntegrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistorsCONS RIC MICROELETTRONICA·Filed 1992·Granted Oct 15, 1996·30 cites·18 claims
- 1071US7050322B2Device integrating a nonvolatile memory array and a volatile memory arrayST MICROELECTRONICS SRL·Filed 2003·Granted May 23, 2006·17 cites·10 claims
- 1171US5489799AIntegrated edge structure for high voltage semiconductor devices and related manufacturing processsCONS RIC MICROELETTRONICA·Filed 1994·Granted Feb 6, 1996·28 cites·17 claims
- 1270US6326271B2Asymmetric MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 2000·Granted Dec 4, 2001·14 cites·8 claims
- 1370US6218706B1Integrated circuit with improved electrostatic discharge protection circuitryST MICROELECTRONICS INC·Filed 1999·Granted Apr 17, 2001·24 cites·20 claims
- 1470US5382538AMethod for forming MOS transistors having vertical current flow and resulting structureCONS RIC MICROELETTRONICA·Filed 1993·Granted Jan 17, 1995·29 cites·5 claims
- 1564US5895249AIntegrated edge structure for high voltage semiconductor devices and related manufacturing processCONS RIC MICROELETTRONICA·Filed 1996·Granted Apr 20, 1999·21 cites·5 claims
- 1664US5591662AMethod of manufacturing a power integrated circuit (PIC) structureCONS RIC MICROELETTRONICA·Filed 1995·Granted Jan 7, 1997·21 cites·14 claims
- 1763US5602416APower integrated circuit ("PIC") structureCONS RIC MICROELETTRONICA·Filed 1995·Granted Feb 11, 1997·20 cites·20 claims
- 1862US5869357AMetallization and wire bonding process for manufacturing power semiconductor devicesCONS RIC MICROELETTRONICA·Filed 1996·Granted Feb 9, 1999·25 cites·10 claims
- 1961US6222232B1Asymmetric MOS technology power deviceSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Apr 24, 2001·18 cites·31 claims
- 2059US5940711AMethod for making high-frequency bipolar transistorST MICROELECTRONICS SRL·Filed 1997·Granted Aug 17, 1999·23 cites·23 claims
- 2158US5475273ASmart power integrated circuit with dynamic isolationSGS THOMSON MICROELECTRONICS·Filed 1992·Granted Dec 12, 1995·18 cites·30 claims
- 2257US5654225AIntegrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereofCONS RIC MICROELETTRONICA·Filed 1995·Granted Aug 5, 1997·15 cites·17 claims
- 2356US6656801B2Method of fabricating a ferroelectric stacked memory cellST MICROELECTRONICS SRL·Filed 2001·Granted Dec 2, 2003·5 cites·19 claims
- 2455US5777367AIntegrated structure active clamp for the protection of power devices against overvoltagesCONS RIC MICROELETTRONICA·Filed 1997·Granted Jul 7, 1998·13 cites·22 claims
- 2554US5679587AMethod of fabricating an integrated circuit with vertical bipolar power transistors and isolated lateral bipolar control transistorsCONS RIC MICROELETTRONICA·Filed 1995·Granted Oct 21, 1997·16 cites·24 claims
- 2654US5556792AProcess for manufacturing a power integrated circuit ("PIC") structure with a vertical IGBTCONS RIC MICROELETTRONICA·Filed 1995·Granted Sep 17, 1996·13 cites·10 claims
- 2754US5523607AIntegrated current-limiter device for power MOS transistorsCONS RIC MICROELETTRONICA·Filed 1995·Granted Jun 4, 1996·15 cites·25 claims
- 2854US4780430AProcess for the formation of a monolithic high voltage semiconductor deviceSGS MICROELETTRONICA SPA·Filed 1987·Granted Oct 25, 1988·17 cites·10 claims
- 2953US6878982B2Method of forming a contact structure and a ferroelectric memory deviceST MICROELECTRONICS SRL·Filed 2003·Granted Apr 12, 2005·4 cites·19 claims
- 3053US6294798B1Integrated circuit structure comprising capacitor element and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted Sep 25, 2001·10 cites·20 claims
- 3152US6093948AMOS transistors having vertical current flowCONSORZIO PER LA RICERCA SULLE·Filed 1994·Granted Jul 25, 2000·15 cites·23 claims
- 3252US5491357AIntegrated structure current sensing resistor for power MOS devices, particularly for overload self-protected power MOS devicesCONS RIC MICROELETTRONICA·Filed 1995·Granted Feb 13, 1996·14 cites·33 claims
- 3350US7049646B2Capacitor for semiconductor integrated devicesST MICROELECTRONICS SRL·Filed 2002·Granted May 23, 2006·6 cites·35 claims
- 3450US5986323AHigh-frequency bipolar transistor structureCONS RIC MICROELETTRONICA·Filed 1995·Granted Nov 16, 1999·12 cites·16 claims
- 3550US5422509AIntegrated current-limiter device for power MOS transistorsCONS RIC MICROELETTRONICA·Filed 1993·Granted Jun 6, 1995·11 cites·12 claims
- 3649US6366488B1Ferroelectric non-volatile memory cell integrated in a semiconductor substrateST MICROELECTRONICS SRL·Filed 2000·Granted Apr 2, 2002·6 cites·13 claims
- 3749US5796157AHigh-frequency lateral PNP transistorCONS RIC MICROELETTRONICA·Filed 1995·Granted Aug 18, 1998·14 cites·13 claims
- 3849US5703385APower integrated circuit ("PIC") structure with a vertical IGBTCONS RIC MICROELETTRONICA·Filed 1995·Granted Dec 30, 1997·10 cites·11 claims
- 3948US6872996B2Method of fabricating a ferroelectric stacked memory cellST MICROELECTRONICS SRL·Filed 2003·Granted Mar 29, 2005·3 cites·21 claims
- 4048US4965215AManufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chipSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Oct 23, 1990·15 cites·2 claims
- 4147US6410404B1Process for manufacturing SOI integrated circuits and circuits made therebyST MICROELECTRONICS SRL·Filed 2000·Granted Jun 25, 2002·1 cites·20 claims
- 4247US4898836AProcess for forming an integrated circuit on an N type substrate comprising PNP and NPN transistors placed vertically and insulated one from anotherSGS THOMSON MICROELECTRONICS·Filed 1989·Granted Feb 6, 1990·14 cites·2 claims
- 4346US6633060B2Contact structure for a ferroelectric memory deviceST MICROELECTRONICS SRL·Filed 2001·Granted Oct 14, 2003·2 cites·17 claims
- 4445US6737284B2Contact structure for semiconductor devices and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2002·Granted May 18, 2004·1 cites·20 claims
- 4545US6541808B2Contact structure for semiconductor devices and corresponding manufacturing processFiled 2001·Granted Apr 1, 2003·1 cites·24 claims
- 4645US5376821AIntegrated emitter switching configuration using bipolar transistorsSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Dec 27, 1994·10 cites·10 claims
- 4744US5804486AProcess for manufacturing a high-frequency bipolar transistor structureCONS RIC MICROELETTRONICA·Filed 1997·Granted Sep 8, 1998·9 cites·5 claims
- 4843US7052985B2Contact structure for an integrated semiconductor deviceST MICROELECTRONICS SRL·Filed 2004·Granted May 30, 2006·1 cites·32 claims
- 4943US5631177AProcess for manufacturing integrated circuit with power field effect transistorsSGS THOMSON MICROELECTRONICS·Filed 1995·Granted May 20, 1997·8 cites·13 claims
- 5043US5300451AProcess for forming a buried drain or collector region in monolithic semiconductor devicesCONS RIC MICROELETTRONICA·Filed 1992·Granted Apr 5, 1994·9 cites·18 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →