Inventor · disambiguated record
Rémy Gassilloud
Also filed as: GASSILLOUD REMY · GASSILLOUD RÉMY
6 granted patents·7 pending applications·6 citations·filing 2011–2024
69Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE9COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES2COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1GASSILLOUD REMY1
Top patents by PatentIndex Score
13 records- 0176US9768379B2Non volatile resistive memory cell and its method of makingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Sep 19, 2017·4 cites·28 claims
- 0261US8609522B2Process for producing a conducting electrodeGASSILLOUD REMY·Filed 2011·Granted Dec 17, 2013·2 cites·16 claims
- 0357US2025263865A1Process for producing a crystalline layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 0457US2024194485A1Method for manufacturing a sige channel field effect transistorCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 0555US2024203731A1Method of manufacturing an electronic deviceCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 0654US12120889B2Method for manufacturing a microelectronic device comprising a plurality of resistive memory points configured to form a physical unclonable function and said deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Oct 15, 2024·0 cites·11 claims
- 0752US2023183857A1Chemical vacuum deposition of a thin tungsten and/or molybdenum sulfide film methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 0850US2024237561A9Resistive memory device and manufacturing methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 0948US11377735B2Apparatus for depositing chalcogenide thin filmsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 5, 2022·0 cites·20 claims
- 1046US2023060860A1Resistive memory device and production methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1143US2021010133A1Method of manufacture of a film made of vanadium disulfide film and film which can be obtained by this methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Application pending·0 cites
- 1239US11031554B2Method for manufacturing a pass-through deviceCOMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2018·Granted Jun 8, 2021·0 cites·14 claims
- 1337US11329224B2OxRAM oxide based resistive random access memory cell and associated manufacturing methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted May 10, 2022·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →