Inventor · disambiguated record
Reum Oh
Also filed as: OH REUM
33 granted patents·2 pending applications·204 citations·filing 2003–2025
96Inventor score
Top patents by PatentIndex Score
35 records- 0195US10083722B2Memory device for performing internal process and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·14 cites·19 claims
- 0295US7609584B2Latency control circuit and method thereof and an auto-precharge control circuit and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 27, 2009·48 cites·32 claims
- 0394US11194505B2High bandwidth memory device and system device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 7, 2021·6 cites·20 claims
- 0494US10740033B2Memory device sampling data using control signal transmitted through TSVSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 11, 2020·12 cites·20 claims
- 0593US7786752B2Memory systems, on-die termination (ODT) circuits, and method of ODT controlSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 31, 2010·33 cites·26 claims
- 0692US10592467B2Semiconductor memory device and method of operating a semiconductor device in a processor mode or a normal modeSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 17, 2020·9 cites·12 claims
- 0792US10410685B2Memory device for performing internal process and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 10, 2019·7 cites·20 claims
- 0892US10241150B2Semiconductor apparatus, stack semiconductor apparatus, and test method of the stack semiconductor apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 26, 2019·18 cites·15 claims
- 0989US10262699B2Memory device for performing internal process and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 16, 2019·5 cites·21 claims
- 1088US11538506B2Semiconductor device and semiconductor package including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·2 cites·20 claims
- 1188US11435397B2Wafer level methods of testing semiconductor devices using internally-generated test enable signalsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 6, 2022·3 cites·20 claims
- 1280US12203980B2Wafer level methods of testing semiconductor devices using internally-generated test enable signalsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1378US11334282B2High bandwidth memory device and system device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 17, 2022·1 cites·20 claims
- 1477US10224114B2Semiconductor device using a parallel bit operation and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·5 cites·17 claims
- 1575US11867751B2Wafer level methods of testing semiconductor devices using internally-generated test enable signalsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·17 claims
- 1675US10996885B2High bandwidth memory device and system device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 4, 2021·3 cites·18 claims
- 1772US8107308B2Semiconductor memory deviceKIM MYEONG-O·Filed 2010·Granted Jan 31, 2012·8 cites·20 claims
- 1870US10768824B2Stacked memory device and a memory chip including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 8, 2020·1 cites·20 claims
- 1969US7436204B2Apparatus and method for determining on die termination modes in memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 14, 2008·6 cites·20 claims
- 2068US11681457B2High bandwidth memory device and system device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 20, 2023·0 cites·10 claims
- 2168US10331354B2Stacked memory device and a memory chip including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·1 cites·19 claims
- 2267US7911862B2Latency control circuit and method thereof and an auto-precharge control circuit and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 22, 2011·5 cites·13 claims
- 2366US7298667B2Latency control circuit and method of latency controlSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 20, 2007·6 cites·50 claims
- 2465US12250807B2Semiconductor device using different types of through-silicon-viasSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·18 claims
- 2563US2025169067A1Semiconductor device using different types of through-silicon-viasSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2660US11239210B2Semiconductor die for determining load of through silicon via and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·12 claims
- 2758US10671464B2Memory device comprising status circuit and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 2, 2020·1 cites·19 claims
- 2858US6847559B2Input buffer circuit of a synchronous semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 25, 2005·9 cites·7 claims
- 2956US11829224B2Method of operating memory device and memory device performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·18 claims
- 3049US11599301B2Semiconductor memory device and system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 3149US10916525B2Semiconductor die for determining load of through silicon via and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 9, 2021·0 cites·8 claims
- 3243US12299296B2Semiconductor memory device and method of adjusting operation condition of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 13, 2025·0 cites·18 claims
- 3343US8228748B2Semiconductor memory device having reduced power consumption during latencyPARK TAEK-SEON·Filed 2010·Granted Jul 24, 2012·1 cites·14 claims
- 3436US10373661B2Stacked semiconductor device and system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 6, 2019·0 cites·18 claims
- 3535US2007201286A1Input circuit of a semiconductor memory device and method of controlling the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →