Inventor · disambiguated record
Rebecca Park
Also filed as: PARK REBECCA
7 granted patents·13 pending applications·46 citations·filing 2011–2025
78Inventor score
Top patents by PatentIndex Score
20 records- 0192US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 0288USD704721SPortion of a display panel with a user interfaceSASSOON JOSH·Filed 2011·Granted May 13, 2014·42 cites·1 claims
- 0384US11488529B2Display compensation using current sensing across a diode without user detectionAPPLE INC·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 0474US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0567US12456647B2Nanosheet transistor devices and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·16 claims
- 0667US2023317513A1Fully aligned via integration with selective catalyzed vapor phase grown materialsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0766US11705363B2Fully aligned via integration with selective catalyzed vapor phase grown materialsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·16 claims
- 0858US11817199B2Brachytherapy applicator formation method and apparatusVARIAN MED SYS INC·Filed 2019·Granted Nov 14, 2023·0 cites·21 claims
- 0958US2023178440A1Methods of forming integrated circuit devices including stacked transistors and integrated circuit devices formed by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1055US2024429307A1Systems and methods of applying stress in transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1153US2024405128A1Field effect transistor (fet) and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1252US2025072098A1Source/drain isolation of top and bottom tiers of 3d field-effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1352US2024347537A1Common output in 3d stack fetSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1452US2025366107A1System and methods for shaped epitaxial stressorsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1552US2024413232A1High performance fetsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1650US2024047539A13d stacked field-effect transistor device with pn junction structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1750US2024047456A13dsfet standard cell architecture with source-drain junction isolationSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1849US2023310886A1Brachytherapy treatment system and method of operating the systemVARIAN MED SYS INC·Filed 2022·Application pending·0 cites
- 1947US2025359192A1System and method for high stress transfer to channelSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2045US11282458B2Systems and methods for temperature-based parasitic capacitance variation compensationAPPLE INC·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →