Inventor · disambiguated record
Reinhold Schorner
Also filed as: SCHOERNER REINHOLD · SCHORNER REINHOLD
13 granted patents·1 pending application·451 citations·filing 1999–2006
93Inventor score
Top patents by PatentIndex Score
14 records- 0195US7615802B2Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 10, 2009·125 cites·20 claims
- 0292US6316791B1Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted Nov 13, 2001·78 cites·18 claims
- 0392US6204135B1Method for patterning semiconductors with high precision, good homogeneity and reproducibilitySICED ELECT DEV GMBH & CO KG·Filed 2000·Granted Mar 20, 2001·76 cites·19 claims
- 0484US7206178B2Electronic switching deviceSIEMENS AG·Filed 2001·Granted Apr 17, 2007·29 cites·53 claims
- 0584US6468890B2Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor deviceSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Oct 22, 2002·36 cites·24 claims
- 0679US7646026B2SiC-PN power diodeSICED ELECT DEV GMBH & CO KG·Filed 2006·Granted Jan 12, 2010·8 cites·20 claims
- 0777US7082020B2Electronic switching device and an operating method thereofSIEMENS AG·Filed 2002·Granted Jul 25, 2006·24 cites·55 claims
- 0873US6693322B2Semiconductor construction with buried island region and contact regionSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Feb 17, 2004·19 cites·18 claims
- 0972US6097039ASilicon carbide semiconductor configuration with a high degree of channel mobilitySIEMENS AG·Filed 1999·Granted Aug 1, 2000·33 cites·21 claims
- 1065US6667495B2Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configurationSCICED ELECTRONICS DEV GMBH &·Filed 2000·Granted Dec 23, 2003·15 cites·21 claims
- 1148US7071503B2Semiconductor structure with a switch element and an edge elementSICED ELECT DEV GMBH & CO KG·Filed 2004·Granted Jul 4, 2006·4 cites·19 claims
- 1245US6815351B2Method for contacting a semiconductor configurationSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 9, 2004·2 cites·12 claims
- 1343US6225680B1Semiconductor structure based on silicon carbide material, with a plurality electrically different partial regionsSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted May 1, 2001·2 cites·12 claims
- 1436US2001002705A1Semiconductor configuration with an Ohmic contact-connection and method for contacting a semiconductor configurationFiled 2000·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →