Inventor · disambiguated record
Richard Ferrant
Also filed as: FERRANT RICHARD · FERRANT RICHARD J
85 granted patents·8 pending applications·2,051 citations·filing 1986–2014
99Inventor score
Files withST MICROELECTRONICS SA22MAZURE CARLOS13SOITEC SILICON ON INSULATOR13ST MICROELECTRONICS INC7SGS THOMSON MICROELECTRONICS6
Top patents by PatentIndex Score
93 records- 0199US7733693B2Semiconductor memory device and method of operating sameINNOVATIVE SILICON ISI SA·Filed 2008·Granted Jun 8, 2010·222 cites·20 claims
- 0299US7187581B2Semiconductor memory device and method of operating sameINNOVATIVE SILICON SA·Filed 2005·Granted Mar 6, 2007·148 cites·23 claims
- 0399US7085156B2Semiconductor memory device and method of operating sameINNOVATIVE SILICON SA·Filed 2005·Granted Aug 1, 2006·358 cites·21 claims
- 0498US7085153B2Semiconductor memory cell, array, architecture and device, and method of operating sameINNOVATIVE SILICON SA·Filed 2004·Granted Aug 1, 2006·231 cites·41 claims
- 0598US6005818ADynamic random access memory device with a latching mechanism that permits hidden refresh operationsST MICROELECTRONICS INC·Filed 1998·Granted Dec 21, 1999·242 cites·20 claims
- 0696US8305803B2DRAM memory cell having a vertical bipolar injectorMAZURE CARLOS·Filed 2010·Granted Nov 6, 2012·27 cites·20 claims
- 0796US7359229B2Semiconductor memory device and method of operating sameINNOVATIVE SILICON SA·Filed 2007·Granted Apr 15, 2008·40 cites·19 claims
- 0895US7212432B2Resistive memory cell random access memory device and method of fabricationALTIS SEMICONDUCTOR SNC·Filed 2004·Granted May 1, 2007·115 cites·12 claims
- 0992US8652887B2Multi-layer structures and process for fabricating semiconductor devicesNGUYEN BICH-YEN·Filed 2012·Granted Feb 18, 2014·14 cites·20 claims
- 1091US7180160B2MRAM storage deviceALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Feb 20, 2007·73 cites·18 claims
- 1189US8575697B2SRAM-type memory cellMAZURE CARLOS·Filed 2011·Granted Nov 5, 2013·13 cites·12 claims
- 1288US5973985ADual port SRAM cell having pseudo ground line or pseudo power lineST MICROELECTRONICS INC·Filed 1998·Granted Oct 26, 1999·71 cites·25 claims
- 1387US8384425B2Arrays of transistors with back control gates buried beneath the insulating film of a semiconductor-on-insulator substrateSOITEC SILICON ON INSULATOR·Filed 2010·Granted Feb 26, 2013·9 cites·18 claims
- 1485US9135964B2Differential sense amplifier without switch transistorsFERRANT RICHARD·Filed 2012·Granted Sep 15, 2015·10 cites·13 claims
- 1583US8310866B2MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operationsLEUSCHNER RAINER·Filed 2008·Granted Nov 13, 2012·10 cites·16 claims
- 1683US6205077B1One-time programmable logic cellST MICROELECTRONICS SA·Filed 2000·Granted Mar 20, 2001·25 cites·17 claims
- 1782US8664712B2Flash memory cell on SeOI having a second control gate buried under the insulating layerMAZURE CARLOS·Filed 2010·Granted Mar 4, 2014·6 cites·17 claims
- 1881US9159400B2Semiconductor memory having staggered sense amplifiers associated with a local column decoderFERRANT RICHARD·Filed 2012·Granted Oct 13, 2015·8 cites·20 claims
- 1980US8953399B2Differential sense amplifier without dedicated pass-gate transistorsFERRANT RICHARD·Filed 2012·Granted Feb 10, 2015·7 cites·20 claims
- 2080US8358552B2Nano-sense amplifierSOITEC SILICON ON INSULATOR·Filed 2010·Granted Jan 22, 2013·6 cites·22 claims
- 2179US9490264B2Device having a contact between semiconductor regions through a buried insulating layer, and process for fabricating said deviceMAZURE CARLOS·Filed 2011·Granted Nov 8, 2016·5 cites·14 claims
- 2279US8223582B2Pseudo-inverter circuit on SeOIMAZURE CARLOS·Filed 2010·Granted Jul 17, 2012·6 cites·21 claims
- 2378US9035474B2Method for manufacturing a semiconductor substrateMAZURE CARLOS·Filed 2010·Granted May 19, 2015·4 cites·15 claims
- 2478US8455938B2Device comprising a field-effect transistor in a silicon-on-insulatorNGUYEN BICH-YEN·Filed 2010·Granted Jun 4, 2013·5 cites·20 claims
- 2577US9225237B2Charge pump circuit comprising multiple—gate transistors and method of operating the sameSOITEC SILICON ON INSULATOR·Filed 2013·Granted Dec 29, 2015·4 cites·16 claims
- 2676US8508289B2Data-path cell on an SeOI substrate with a back control gate beneath the insulating layerMAZURE CARLOS·Filed 2011·Granted Aug 13, 2013·4 cites·22 claims
- 2776US8432216B2Data-path cell on an SeOI substrate with a back control gate beneath the insulating layerMAZURE CARLOS·Filed 2011·Granted Apr 30, 2013·4 cites·17 claims
- 2874US7068533B2Resistive memory cell configuration and method for sensing resistance valuesALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Jun 27, 2006·21 cites·20 claims
- 2972US8325506B2Devices and methods for comparing data in a content-addressable memoryMAZURE CARLOS·Filed 2010·Granted Dec 4, 2012·3 cites·18 claims
- 3072US8304833B2Memory cell with a channel buried beneath a dielectric layerMAZURE CARLOS·Filed 2010·Granted Nov 6, 2012·3 cites·22 claims
- 3169US8654602B2Pseudo-inverter circuit on SeOIMAZURE CARLOS·Filed 2012·Granted Feb 18, 2014·3 cites·14 claims
- 3267US6538942B2Process for controlling a read access for a dynamic random access memory and corresponding memoryST MICROELECTRONICS SA·Filed 2001·Granted Mar 25, 2003·15 cites·30 claims
- 3367US6455884B1Radiation hardened semiconductor memory with active isolation regionsST MICROELECTRONICS INC·Filed 2000·Granted Sep 24, 2002·15 cites·32 claims
- 3467US5570313AMemory insensitive to disturbancesTHOMSON CSF SEMICONDUCTEURS·Filed 1995·Granted Oct 29, 1996·28 cites·5 claims
- 3566US6563749B2Dynamic memory circuit including spare cellsST MICROELECTRONICS SA·Filed 2001·Granted May 13, 2003·14 cites·18 claims
- 3664US8625374B2Nano-sense amplifierSOITEC SILICON ON INSULATOR·Filed 2012·Granted Jan 7, 2014·2 cites·20 claims
- 3762US7130206B2Content addressable memory cell including resistive memory elementsALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Oct 31, 2006·11 cites·19 claims
- 3861US6421799B1Redundancy correction ROMST MICROELECTRONICS SA·Filed 1999·Granted Jul 16, 2002·19 cites·20 claims
- 3959US5862091AMemory accessible in read mode onlySGS THOMSON MICROELECTRONICS·Filed 1997·Granted Jan 19, 1999·21 cites·16 claims
- 4058US9621168B2Look-up tableSOITEC SILICON ON INSULATOR·Filed 2013·Granted Apr 11, 2017·1 cites·17 claims
- 4157US9479174B2Tristate gateSOITEC SILICON ON INSULATOR·Filed 2012·Granted Oct 25, 2016·1 cites·14 claims
- 4257US7994560B2Integrated circuit comprising a transistor and a capacitor, and fabrication methodST MICROELECTRONICS CROLLES 2·Filed 2008·Granted Aug 9, 2011·1 cites·23 claims
- 4355US9576642B2Memory device with dynamically operated reference circuitsSOITEC SILICON ON INSULATOR·Filed 2014·Granted Feb 21, 2017·1 cites·20 claims
- 4455US7200032B2MRAM with vertical storage element and field sensorALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Apr 3, 2007·8 cites·25 claims
- 4555US6452841B1Dynamic random access memory device and corresponding reading processST MICROELECTRONICS SA·Filed 2000·Granted Sep 17, 2002·8 cites·41 claims
- 4654US9390771B2Circuit and method for sensing a difference in voltage on a pair of dual signal lines, in particular through equalize transistorSOITEC SILICON ON INSULATOR·Filed 2013·Granted Jul 12, 2016·1 cites·11 claims
- 4753US7817466B2Semiconductor array including a matrix of cells and a method of making a semiconductor array having a matrix of cellsST MICROELECTRONICS CROLLES 2·Filed 2008·Granted Oct 19, 2010·1 cites·25 claims
- 4853US6535987B1Amplifier with a fan-out variable in timeST MICROELECTRONICS SA·Filed 1999·Granted Mar 18, 2003·30 cites·14 claims
- 4952US6934202B2Memory circuit with dynamic redundancySGS THOMSON MICROELECTRONICS·Filed 2003·Granted Aug 23, 2005·5 cites·18 claims
- 5051US6091650ARedundancy for low remanence memory cellsST MICROELECTRONICS SA·Filed 1999·Granted Jul 18, 2000·12 cites·20 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →