Inventor · disambiguated record
Riichi Katoh
Also filed as: KATOH RIICHI
12 granted patents·915 citations·filing 1988–2004
94Inventor score
Top patents by PatentIndex Score
12 records- 0198US6060743ASemiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted May 9, 2000·267 cites·13 claims
- 0294US5710436AQuantum effect deviceTOSHIBA KK·Filed 1995·Granted Jan 20, 1998·145 cites·20 claims
- 0394US5177583AHeterojunction bipolar transistorTOSHIBA KK·Filed 1991·Granted Jan 5, 1993·144 cites·17 claims
- 0493US6778042B2High-frequency deviceTOSHIBA KK·Filed 2001·Granted Aug 17, 2004·35 cites·19 claims
- 0593US5670790AElectronic deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1996·Granted Sep 23, 1997·120 cites·21 claims
- 0679US6937117B2High-frequency deviceTOSHIBA KK·Filed 2004·Granted Aug 30, 2005·12 cites·14 claims
- 0776US6333516B1Quantum effect deviceTOSHIBA KK·Filed 1996·Granted Dec 25, 2001·75 cites·16 claims
- 0875US5010382AHeterojunction bipolar transistor having double hetero structureTOSHIBA KK·Filed 1989·Granted Apr 23, 1991·32 cites·10 claims
- 0966US4933732AHeterojunction bipolar transistorTOSHIBA KK·Filed 1988·Granted Jun 12, 1990·24 cites·6 claims
- 1064US5041882AHeterojunction bipolar transistorTOSHIBA KK·Filed 1990·Granted Aug 20, 1991·24 cites·15 claims
- 1158US5336909ABipolar transistor with an improved collector structureTOSHIBA KK·Filed 1992·Granted Aug 9, 1994·21 cites·16 claims
- 1255US5844279ASingle-electron semiconductor deviceTOSHIBA KK·Filed 1996·Granted Dec 1, 1998·16 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →