Inventor · disambiguated record
Richard D. Pashley
Also filed as: PASHLEY RICHARD D
18 granted patents·2,148 citations·filing 1975–2004
97Inventor score
Top patents by PatentIndex Score
18 records- 0198US6564285B1Synchronous interface for a nonvolatile memoryINTEL CORP·Filed 2000·Granted May 13, 2003·394 cites·18 claims
- 0298US6026465AFlash memory including a mode register for indicating synchronous or asynchronous mode of operationINTEL CORP·Filed 1997·Granted Feb 15, 2000·362 cites·12 claims
- 0398US4272880AMOS/SOS ProcessINTEL CORP·Filed 1979·Granted Jun 16, 1981·187 cites·17 claims
- 0497US5696917AMethod and apparatus for performing burst read operations in an asynchronous nonvolatile memoryINTEL CORP·Filed 1994·Granted Dec 9, 1997·204 cites·11 claims
- 0594US6418506B1Integrated circuit memory and method for transferring data using a volatile memory to buffer data for a nonvolatile memory arrayINTEL CORP·Filed 1996·Granted Jul 9, 2002·148 cites·9 claims
- 0694US5978833AMethod and apparatus for accessing and downloading information from the internetINTEL CORP·Filed 1996·Granted Nov 2, 1999·231 cites·19 claims
- 0794US5822256AMethod and circuitry for usage of partially functional nonvolatile memoryINTEL CORP·Filed 1997·Granted Oct 13, 1998·203 cites·52 claims
- 0892US4096584ALow power/high speed static ramINTEL CORP·Filed 1977·Granted Jun 20, 1978·51 cites·10 claims
- 0989US4178674AProcess for forming a contact region between layers of polysilicon with an integral polysilicon resistorINTEL CORP·Filed 1978·Granted Dec 18, 1979·59 cites·6 claims
- 1086US4052229AProcess for preparing a substrate for mos devices of different thresholdsINTEL CORP·Filed 1976·Granted Oct 4, 1977·46 cites·13 claims
- 1185US6385688B1Asynchronous interface for a nonvolatile memoryINTEL CORP·Filed 1997·Granted May 7, 2002·89 cites·11 claims
- 1284US4033026AHigh density/high speed MOS process and deviceINTEL CORP·Filed 1975·Granted Jul 5, 1977·42 cites·9 claims
- 1382US5732207AMicroprocessor having single poly-silicon EPROM memory for programmably controlling optional featuresINTEL CORP·Filed 1995·Granted Mar 24, 1998·54 cites·11 claims
- 1476US3946369AHigh speed MOS RAM employing depletion loadsINTEL CORP·Filed 1975·Granted Mar 23, 1976·17 cites·14 claims
- 1569US4026733AProcess for defining polycrystalline silicon patternsINTEL CORP·Filed 1975·Granted May 31, 1977·26 cites·8 claims
- 1664US4058413AIon implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layerUS AIR FORCE·Filed 1976·Granted Nov 15, 1977·23 cites·1 claims
- 1748USRE44877EMethod and apparatus for accessing and downloading information from the internetPASHLEY RICHARD D·Filed 2004·Granted Apr 29, 2014·3 cites·34 claims
- 1835US5852712AMicroprocessor having single poly-silicon EPROM memory for programmably controlling optional featuresINTEL CORP·Filed 1997·Granted Dec 22, 1998·9 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →