Inventor · disambiguated record
Richard L. Woodin
Also filed as: WOODIN RICHARD L
12 granted patents·3 pending applications·53 citations·filing 2000–2011
89Inventor score
Top patents by PatentIndex Score
15 records- 0186US8357976B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Jan 22, 2013·8 cites·8 claims
- 0282US7859057B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Dec 28, 2010·8 cites·16 claims
- 0382US7586156B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 8, 2009·8 cites·38 claims
- 0481US7411218B2Method and device with durable contact on silicon carbideFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Aug 12, 2008·10 cites·11 claims
- 0564USRE42423EContact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methodsFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Jun 7, 2011·2 cites·15 claims
- 0661US7411219B2Uniform contactFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Aug 12, 2008·2 cites·21 claims
- 0756US7132701B1Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methodsFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Nov 7, 2006·6 cites·14 claims
- 0856US6664721B1Gated electron field emitter having an interlayerEXTREME DEVICES INC·Filed 2000·Granted Dec 16, 2003·3 cites·13 claims
- 0951US8124981B2Rugged semiconductor device architectureREXER CHRISTOPHER L·Filed 2008·Granted Feb 28, 2012·2 cites·24 claims
- 1049US6955978B1Uniform contactFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Oct 18, 2005·4 cites·22 claims
- 1148US7638820B2Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methodsFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Dec 29, 2009·0 cites·7 claims
- 1248US7618884B2Method and device with durable contact on silicon carbideFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Nov 17, 2009·0 cites·23 claims
- 1347US2008014764A1Low temperature, long term annealing of nickel contacts to lower interfacial resistanceFAIRCHILD SEMICONDUCTOR·Filed 2007·Application pending·0 cites
- 1438US2011318920A1Low temperature, long term annealing of nickel contacts to lower interfacial resistanceSENG WILLIAM F·Filed 2011·Application pending·0 cites
- 1531US2005215041A1Low temperature, long term annealing of nickel contacts to lower interfacial resistanceSENG WILLIAM F·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →