Inventor · disambiguated record
Roman Chepulskyy
Also filed as: CHEPULSKYY ROMAN
20 granted patents·8 pending applications·117 citations·filing 2012–2024
93Inventor score
Top patents by PatentIndex Score
28 records- 0198US9130155B2Magnetic junctions having insertion layers and magnetic memories using the magnetic junctionsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 8, 2015·59 cites·31 claims
- 0290US9966901B2Spin-torque oscillator based on easy-cone anisotropySAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 8, 2018·5 cites·19 claims
- 0388US9634241B2Method and system for providing magnetic junctions including Heusler multilayersSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 25, 2017·7 cites·20 claims
- 0488US9384811B2Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriersSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 5, 2016·6 cites·20 claims
- 0587US12512137B2Multilayered vertical spin-orbit torque devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 30, 2025·2 cites·20 claims
- 0687US8786039B2Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropyAPALKOV DMYTRO·Filed 2012·Granted Jul 22, 2014·11 cites·40 claims
- 0783US9287322B2Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 15, 2016·4 cites·23 claims
- 0883US9236564B2Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layerSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·6 cites·23 claims
- 0977US9082534B2Magnetic element having perpendicular anisotropy with enhanced efficiencyCHEPULSKYY ROMAN·Filed 2013·Granted Jul 14, 2015·6 cites·22 claims
- 1074US10121961B2Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torqueSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 6, 2018·2 cites·18 claims
- 1172US2024237542A1Perpendicular shape anisotropy design with asymmetric composite free layerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1272US2024234000A1Perpendicular shape anisotropy design with dual spin filteringSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1372US2024237543A1Perpendicular shape anisotropy design with reduced aexSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1471US9478730B2Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 25, 2016·4 cites·18 claims
- 1567US10205092B2Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 12, 2019·2 cites·20 claims
- 1666US9825220B2B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAMSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·2 cites·18 claims
- 1757US10121960B2Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent(s)SAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 6, 2018·1 cites·12 claims
- 1856US12114578B2Magnetoresistive memory elements for spin-transfer torque (STT) and spin-orbit torque (SOT) random access memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·16 claims
- 1956US2025057050A1Interfacial nitridation for growth of perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 2055US2025338779A1Lattice-matched oxide layer as tunnel barrier for perpendicularly magnetized heusler compoundsIBM·Filed 2024·Application pending·0 cites
- 2153US2025151628A1Mn-Sb COMPOUNDS FOR MAGNETIC RANDOM ACCESS MEMORY FREE LAYERSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2252US11776726B2Dipole-coupled spin-orbit torque structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 3, 2023·0 cites·20 claims
- 2350US11348627B2Race-track memory with improved domain wall motion controlSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 2450US2023276714A1Semiconductor device and method of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2548US9490000B2Method and system for providing thermally assisted magnetic junctions having a multi-phase operationSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 8, 2016·0 cites·17 claims
- 2648US2015041933A1Method and system for providing magnetic junctions using bcc cobalt and suitable for use in spin transfer torque memoriesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2739US9735350B2Method and system for removing boron from magnetic junctions usable in spin transfer torque memory applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 15, 2017·0 cites·15 claims
- 2837US10003015B2Method and system for providing a diluted free layer magnetic junction usable in spin transfer torque applicationsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 19, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →