Inventor · disambiguated record
Rongming Chu
Also filed as: CHU RONGMING
52 granted patents·2 pending applications·832 citations·filing 2008–2021
98Inventor score
Top patents by PatentIndex Score
54 records- 0199US8237198B2Semiconductor heterostructure diodesWU YIFENG·Filed 2011·Granted Aug 7, 2012·102 cites·15 claims
- 0299US7898004B2Semiconductor heterostructure diodesTRANSPHORM INC·Filed 2008·Granted Mar 1, 2011·139 cites·22 claims
- 0398US9559012B1Gallium nitride complementary transistorsHRL LAB LLC·Filed 2015·Granted Jan 31, 2017·29 cites·22 claims
- 0498US8692294B2Semiconductor devices with field platesTRANSPHORM INC·Filed 2013·Granted Apr 8, 2014·43 cites·51 claims
- 0598US7884394B2III-nitride devices and circuitsTRANSPHORM INC·Filed 2009·Granted Feb 8, 2011·69 cites·23 claims
- 0697US9831315B2Semiconductor devices with field platesTRANSPHORM INC·Filed 2016·Granted Nov 28, 2017·14 cites·28 claims
- 0797US9373699B2Semiconductor devices with field platesTRANSPHORM INC·Filed 2015·Granted Jun 21, 2016·16 cites·45 claims
- 0897US8390000B2Semiconductor devices with field platesCHU RONGMING·Filed 2009·Granted Mar 5, 2013·73 cites·27 claims
- 0996US9812532B1III-nitride P-channel transistorHRL LAB LLC·Filed 2015·Granted Nov 7, 2017·17 cites·24 claims
- 1096US9337332B2III-Nitride insulating-gate transistors with passivationHRL LAB LLC·Filed 2014·Granted May 10, 2016·36 cites·30 claims
- 1196US9111961B2Semiconductor devices with field platesTRANSPHORM INC·Filed 2014·Granted Aug 18, 2015·15 cites·41 claims
- 1296US8530978B1High current high voltage GaN field effect transistors and method of fabricating sameCHU RONGMING·Filed 2011·Granted Sep 10, 2013·58 cites·20 claims
- 1396US8389977B2Reverse side engineered III-nitride devicesCHU RONGMING·Filed 2009·Granted Mar 5, 2013·42 cites·38 claims
- 1495US9142626B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2013·Granted Sep 22, 2015·18 cites·15 claims
- 1595US8941118B1Normally-off III-nitride transistors with high threshold-voltage and low on-resistanceHRL LAB LLC·Filed 2013·Granted Jan 27, 2015·26 cites·26 claims
- 1694US9496137B2Methods of forming reverse side engineered III-nitride devicesTRANSPHORM INC·Filed 2013·Granted Nov 15, 2016·15 cites·9 claims
- 1792US10387792B1Etched spin-qubit for high temperature operationHRL LAB LLC·Filed 2017·Granted Aug 20, 2019·12 cites·20 claims
- 1891US10903333B2Doped gate dielectric materialsHRL LAB LLC·Filed 2017·Granted Jan 26, 2021·6 cites·35 claims
- 1991US9202880B1Etch-based fabrication process for stepped field-plate wide-bandgapHRL LAB LLC·Filed 2013·Granted Dec 1, 2015·10 cites·16 claims
- 2091US8853709B2III-nitride metal insulator semiconductor field effect transistorCHU RONGMING·Filed 2012·Granted Oct 7, 2014·12 cites·13 claims
- 2190US9077335B2Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loopsHRL LAB LLC·Filed 2013·Granted Jul 7, 2015·13 cites·24 claims
- 2290US8653559B2AlGaN/GaN hybrid MOS-HFETCORRION ANDREA·Filed 2011·Granted Feb 18, 2014·19 cites·24 claims
- 2389US10692984B2III-nitride field-effect transistor with dual gatesHRL LAB LLC·Filed 2019·Granted Jun 23, 2020·4 cites·17 claims
- 2489US9041065B2Semiconductor heterostructure diodesTRANSPHORM INC·Filed 2013·Granted May 26, 2015·7 cites·32 claims
- 2588US9059200B1III-Nitride metal-insulator-semiconductor field-effect transistorHRL LAB LLC·Filed 2014·Granted Jun 16, 2015·8 cites·12 claims
- 2687US10276712B2III-nitride field-effect transistor with dual gatesHRL LAB LLC·Filed 2016·Granted Apr 30, 2019·5 cites·14 claims
- 2787US9929243B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2015·Granted Mar 27, 2018·4 cites·17 claims
- 2887US9419122B1Etch-based fabrication process for stepped field-plate wide-bandgapHRL LAB LLC·Filed 2015·Granted Aug 16, 2016·4 cites·7 claims
- 2983US9761438B1Method for manufacturing a semiconductor structure having a passivated III-nitride layerHRL LAB LLC·Filed 2014·Granted Sep 12, 2017·5 cites·6 claims
- 3079US10651306B2Digital alloy based back barrier for P-channel nitride transistorsHRL LAB LLC·Filed 2017·Granted May 12, 2020·2 cites·15 claims
- 3174US10535518B1In situ fabrication of horizontal nanowires and device using sameHRL LAB LLC·Filed 2018·Granted Jan 14, 2020·1 cites·10 claims
- 3269US11361965B1In situ fabrication of horizontal nanowires and device using sameHRL LAB LLC·Filed 2020·Granted Jun 14, 2022·0 cites·6 claims
- 3369US10199217B2Methods of forming reverse side engineered III-nitride devicesTRANSPHORM INC·Filed 2016·Granted Feb 5, 2019·1 cites·10 claims
- 3468US9865725B2III-nitride transistor with trench gateHRL LAB LLC·Filed 2016·Granted Jan 9, 2018·1 cites·29 claims
- 3568US9761709B2III-nitride transistor with enhanced doping in base layerHRL LAB LLC·Filed 2014·Granted Sep 12, 2017·1 cites·7 claims
- 3667US11437485B2Doped gate dielectrics materialsHRL LAB LLC·Filed 2020·Granted Sep 6, 2022·0 cites·21 claims
- 3767US10263104B2FET transistor on a III-V material structure with substrate transferHRL LAB LLC·Filed 2014·Granted Apr 16, 2019·1 cites·9 claims
- 3866US10153761B2GaN-on-sapphire monolithically integrated power converterHRL LAB LLC·Filed 2016·Granted Dec 11, 2018·1 cites·16 claims
- 3965US10943998B2Digital alloy based back barrier for P-channel nitride transistorsHRL LAB LLC·Filed 2020·Granted Mar 9, 2021·0 cites·9 claims
- 4065US10937650B1Semiconductor device having in situ formed horizontal nanowire structureHRL LAB LLC·Filed 2019·Granted Mar 2, 2021·0 cites·4 claims
- 4164US9773884B2III-nitride transistor with engineered substrateHRL LAB LLC·Filed 2013·Granted Sep 26, 2017·2 cites·14 claims
- 4263US11183573B2III-nitride field-effect transistor with dual gatesHRL LAB LLC·Filed 2020·Granted Nov 23, 2021·0 cites·8 claims
- 4363US10910793B2Low modulation-voltage cryogenic diode structureHRL LAB LLC·Filed 2019·Granted Feb 2, 2021·0 cites·53 claims
- 4462US9117935B2Current aperture diode and method of fabricating sameCHU RONGMING·Filed 2012·Granted Aug 25, 2015·1 cites·29 claims
- 4559US10916647B2FET transistor on a III-V material structure with substrate transferHRL LAB LLC·Filed 2019·Granted Feb 9, 2021·0 cites·11 claims
- 4656US10134851B2Tunnel barrier schottkyHRL LAB LLC·Filed 2017·Granted Nov 20, 2018·0 cites·8 claims
- 4755US10181400B2III-Nitride transistor with enhanced doping in base layerHRL LAB LLC·Filed 2017·Granted Jan 15, 2019·0 cites·8 claims
- 4854US9646839B2Ta based ohmic contactHRL LAB LLC·Filed 2014·Granted May 9, 2017·0 cites·31 claims
- 4953US10283358B2Lateral GaN PN junction diode enabled by sidewall regrowthHRL LAB LLC·Filed 2018·Granted May 7, 2019·0 cites·14 claims
- 5051US9899482B2Tunnel barrier schottkyHRL LAB LLC·Filed 2016·Granted Feb 20, 2018·0 cites·12 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →