Inventor · disambiguated record
Robert Ehlert
Also filed as: EHLERT ROBERT
4 granted patents·7 pending applications·0 citations·filing 2020–2024
52Inventor score
Files withINTEL CORP11
Top patents by PatentIndex Score
11 records- 0158US2025220870A1Integrated circuit structure with varied epitaxial source or drain structures and device typesINTEL CORP·Filed 2023·Application pending·0 cites
- 0255US2025006790A1Transistors with antimony and phosphorus doped epitaxial source/drain layersINTEL CORP·Filed 2023·Application pending·0 cites
- 0352US2025311337A1Dopant engineering to suppress epitaxial misshapenness in n-type epitaxial source-drain transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 0452US2025311298A1Gate-all-around transistor without cavity spacer structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 0550US12224337B2PGaN enhancement mode HEMTs with dopant diffusion spacerINTEL CORP·Filed 2020·Granted Feb 11, 2025·0 cites·20 claims
- 0648US12432964B2Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technologyINTEL CORP·Filed 2020·Granted Sep 30, 2025·0 cites·9 claims
- 0746US2024063274A1Source or drain structures with phosphorous and arsenic dopantsINTEL CORP·Filed 2022·Application pending·0 cites
- 0845US12439627B2Gate structures to enable lower subthreshold slope in gallium nitride-based transistorsINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·25 claims
- 0942US11955482B2Source or drain structures with high phosphorous dopant concentrationINTEL CORP·Filed 2020·Granted Apr 9, 2024·0 cites·25 claims
- 1042US2021399119A1Transition metal-iii-nitride alloys for robust high performance hemtsINTEL CORP·Filed 2020·Application pending·0 cites
- 1141US2023132548A1Pre-flow of p-type dopant precursor to enable thinner p-gan layers in gallium nitride-based transistorsINTEL CORP·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →