Inventor · disambiguated record
Robert J. Falster
Also filed as: FALSTER ROBERT · FALSTER ROBERT J
80 granted patents·14 pending applications·1,620 citations·filing 1991–2021
99Inventor score
Files withMEMC ELECTRONIC MATERIALS67MEMC ELECTRONIC MATERIALS SPA8GLOBALWAFERS CO LTD7SUNEDISON SEMICONDUCTOR LTD UEN201334164H5MEMC ELECTRONICS MATERIALS INC2
Top patents by PatentIndex Score
94 records- 0194US7135351B2Method for controlling of thermal donor formation in high resistivity CZ siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Nov 14, 2006·26 cites·36 claims
- 0294US5994761AIdeal oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS SPA·Filed 1997·Granted Nov 30, 1999·122 cites·67 claims
- 0393US6562123B2Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamberMEMC ELECTRONIC MATERIALS·Filed 2001·Granted May 13, 2003·39 cites·15 claims
- 0492US9583364B2Processes and apparatus for preparing heterostructures with reduced strain by radial compressionSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2013·Granted Feb 28, 2017·8 cites·15 claims
- 0591US7485928B2Arsenic and phosphorus doped silicon wafer substrates having intrinsic getteringMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Feb 3, 2009·20 cites·26 claims
- 0691US6409827B2Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interfaceMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 25, 2002·30 cites·32 claims
- 0790US11282715B2Apparatus for stressing semiconductor substratesGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 22, 2022·3 cites·10 claims
- 0890US10361097B2Apparatus for stressing semiconductor substratesSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2013·Granted Jul 23, 2019·6 cites·17 claims
- 0990US6287380B1Low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Sep 11, 2001·59 cites·21 claims
- 1090US6236104B1Silicon on insulator structure from low defect density single crystal siliconMEMC ELECTRONIC MATERIALS·Filed 1999·Granted May 22, 2001·77 cites·40 claims
- 1189US11142844B2High resistivity single crystal silicon ingot and wafer having improved mechanical strengthGLOBALWAFERS CO LTD·Filed 2017·Granted Oct 12, 2021·5 cites·45 claims
- 1289US9583363B2Processes and apparatus for preparing heterostructures with reduced strain by radial distensionSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2013·Granted Feb 28, 2017·5 cites·19 claims
- 1389US6306733B1Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS SPA·Filed 2000·Granted Oct 23, 2001·33 cites·25 claims
- 1488US6689209B2Process for preparing low defect density silicon using high growth ratesMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Feb 10, 2004·24 cites·47 claims
- 1588US6180220B1Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jan 30, 2001·59 cites·57 claims
- 1688US5779791AProcess for controlling thermal history of Czochralski-grown siliconMEMC ELECTRONIC MATERIALS·Filed 1996·Granted Jul 14, 1998·67 cites·51 claims
- 1787US11276583B2Apparatus for stressing semiconductor substratesGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 15, 2022·2 cites·13 claims
- 1887US6579779B1Process for the preparation of an ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile capable of forming an enhanced denuded zoneMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Jun 17, 2003·31 cites·14 claims
- 1987US5593494APrecision controlled precipitation of oxygen in siliconMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Jan 14, 1997·87 cites·33 claims
- 2085US8026145B2Arsenic and phosphorus doped silicon wafer substrates having intrinsic getteringMEMC ELECTRONIC MATERIALS·Filed 2008·Granted Sep 27, 2011·10 cites·18 claims
- 2184US7071080B2Process for producing silicon on insulator structure having intrinsic gettering by ion implantationMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Jul 4, 2006·11 cites·42 claims
- 2284US6897084B2Control of oxygen precipitate formation in high resistivity CZ siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Granted May 24, 2005·29 cites·24 claims
- 2384US5401669AProcess for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centersMEMC ELECTRONIC MATERIALS SPA·Filed 1993·Granted Mar 28, 1995·101 cites·25 claims
- 2483US7521382B2High resistivity silicon structure and a process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2006·Granted Apr 21, 2009·15 cites·54 claims
- 2583US7442253B2Process for forming low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Oct 28, 2008·6 cites·18 claims
- 2683US6586068B1Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Jul 1, 2003·19 cites·21 claims
- 2783US6391662B1Process for detecting agglomerated intrinsic point defects by metal decorationMEMC ELECTRONIC MATERIALS·Filed 2000·Granted May 21, 2002·22 cites·30 claims
- 2883US6342725B2Silicon on insulator structure having a low defect density handler wafer and process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Jan 29, 2002·24 cites·42 claims
- 2983US6336968B1Non-oxygen precipitating czochralski silicon wafersMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Jan 8, 2002·50 cites·44 claims
- 3083US6204152B1Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS SPA·Filed 1999·Granted Mar 20, 2001·43 cites·54 claims
- 3183US6191010B1Process for preparing an ideal oxygen precipitating silicon waferMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Feb 20, 2001·54 cites·44 claims
- 3283US5403406ASilicon wafers having controlled precipitation distributionMEMC ELECTRONIC MATERIALS SPA·Filed 1991·Granted Apr 4, 1995·99 cites·6 claims
- 3382US6537368B2Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS SPA·Filed 2001·Granted Mar 25, 2003·18 cites·18 claims
- 3479US6605150B2Low defect density regions of self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Aug 12, 2003·11 cites·41 claims
- 3578US6284039B1Epitaxial silicon wafers substantially free of grown-in defectsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Sep 4, 2001·27 cites·35 claims
- 3677US6312516B2Process for preparing defect free silicon crystals which allows for variability in process conditionsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Nov 6, 2001·25 cites·33 claims
- 3776US6713370B2Process for the preparation of an ideal oxygen precipitating silicon wafer capable of forming an enhanced denuded zoneMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Mar 30, 2004·14 cites·51 claims
- 3875US6328795B2Process for growth of defect free silicon crystals of arbitrarily large diametersMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Dec 11, 2001·25 cites·31 claims
- 3974US9634098B2Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski methodMEMC ELECTRONIC MAT S P A·Filed 2013·Granted Apr 25, 2017·3 cites·20 claims
- 4074US6432197B2Process for the preparation of non-oxygen precipitating Czochralski silicon wafersMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Aug 13, 2002·13 cites·21 claims
- 4173US6896728B2Process for producing low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2003·Granted May 24, 2005·11 cites·76 claims
- 4272US11655560B2High resistivity single crystal silicon ingot and wafer having improved mechanical strengthGLOBALWAFERS CO LTD·Filed 2021·Granted May 23, 2023·0 cites·30 claims
- 4372US11655559B2High resistivity single crystal silicon ingot and wafer having improved mechanical strengthGLOBALWAFERS CO LTD·Filed 2021·Granted May 23, 2023·0 cites·27 claims
- 4472US6858307B2Method for the production of low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Feb 22, 2005·3 cites·27 claims
- 4572US6638357B2Method for revealing agglomerated intrinsic point defects in semiconductor crystalsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Oct 28, 2003·22 cites·15 claims
- 4671US10453703B2Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yieldSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Oct 22, 2019·1 cites·15 claims
- 4771US6849901B2Device layer of a silicon-on-insulator structure having vacancy dominated and substantially free of agglomerated vacancy-type defectsMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Feb 1, 2005·12 cites·3 claims
- 4870US7229693B2Low defect density, ideal oxygen precipitating siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Jun 12, 2007·2 cites·41 claims
- 4968US11764071B2Apparatus for stressing semiconductor substratesGLOBALWAFERS CO LTD·Filed 2019·Granted Sep 19, 2023·0 cites·7 claims
- 5068US11276582B2Apparatus for stressing semiconductor substratesGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 15, 2022·0 cites·10 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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