Inventor · disambiguated record
Robert M. Farrell
Also filed as: FARRELL JR ROBERT M · FARRELL ROBERT · FARRELL ROBERT M · FARRELL ROBERT MICHAEL
22 granted patents·6 pending applications·342 citations·filing 2000–2018
94Inventor score
Files withUNIV CALIFORNIA15FARRELL ROBERT M3GE MED SYS INFORMATION TECH3FEEZELL DANIEL F2FARRELL JR ROBERT M1
Top patents by PatentIndex Score
28 records- 0196US7846757B2Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2006·Granted Dec 7, 2010·33 cites·23 claims
- 0287US6801802B2System and method for selecting physiological data from a plurality of physiological data sourcesGE MED SYS INFORMATION TECH·Filed 2001·Granted Oct 5, 2004·232 cites·22 claims
- 0383US7480322B2Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laserUNIV CALIFORNIA·Filed 2007·Granted Jan 20, 2009·7 cites·20 claims
- 0483US6939088B2Pneumatic transport air shifterPROTECH STRUCTURAL IND·Filed 2002·Granted Sep 6, 2005·33 cites·29 claims
- 0581US8211723B2Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodesFEEZELL DANIEL F·Filed 2008·Granted Jul 3, 2012·8 cites·26 claims
- 0672US11411137B2III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layersUNIV CALIFORNIA·Filed 2017·Granted Aug 9, 2022·2 cites·14 claims
- 0771US8686466B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesFARRELL JR ROBERT M·Filed 2010·Granted Apr 1, 2014·2 cites·26 claims
- 0869US9040327B2Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodesFEEZELL DANIEL F·Filed 2012·Granted May 26, 2015·1 cites·14 claims
- 0969US7839903B2Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasersUNIV CALIFORNIA·Filed 2008·Granted Nov 23, 2010·2 cites·24 claims
- 1062US10529892B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2017·Granted Jan 7, 2020·0 cites·20 claims
- 1161US11552452B2Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-directionUNIV CALIFORNIA·Filed 2018·Granted Jan 10, 2023·0 cites·21 claims
- 1261US8795430B2Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substratesFARRELL ROBERT M·Filed 2010·Granted Aug 5, 2014·1 cites·21 claims
- 1360US9231376B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2014·Granted Jan 5, 2016·0 cites·31 claims
- 1458US9793435B2Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2015·Granted Oct 17, 2017·0 cites·20 claims
- 1555US9917422B2Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-directionUNIV CALIFORNIA·Filed 2015·Granted Mar 13, 2018·0 cites·20 claims
- 1654US6506163B1Method and system of distinguishing pressure pulses from v waves during wedge pressure measurementGE MED SYS INFORMATION TECH·Filed 2000·Granted Jan 14, 2003·14 cites·28 claims
- 1754US2014308769A1METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga,Al,In,B)N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATESUNIV CALIFORNIA·Filed 2014·Application pending·0 cites
- 1851US10517497B2System and method for detecting atrial fibrillationGEN ELECTRIC·Filed 2017·Granted Dec 31, 2019·0 cites·19 claims
- 1951US6447458B1Method and system of color coding components of central venous and pulmonary artery wedge pressure waveformsGE MED SYS INFORMATION TECH·Filed 2001·Granted Sep 10, 2002·7 cites·28 claims
- 2048US10186835B2Monolithic integration of optically pumped III-nitride devicesUNIV CALIFORNIA·Filed 2014·Granted Jan 22, 2019·0 cites·17 claims
- 2148US8588260B2Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasersFARRELL ROBERT M·Filed 2010·Granted Nov 19, 2013·0 cites·20 claims
- 2248US2012180868A1Iii-nitride flip-chip solar cellsFARRELL ROBERT M·Filed 2011·Application pending·0 cites
- 2344US9356431B2High power blue-violet III-nitride semipolar laser diodesUNIV CALIFORNIA·Filed 2014·Granted May 31, 2016·0 cites·24 claims
- 2444US9077151B2Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-directionHSU PO SHAN·Filed 2011·Granted Jul 7, 2015·0 cites·28 claims
- 2541US2012104411A1Textured iii-v semiconductorIZA MICHAEL·Filed 2011·Application pending·0 cites
- 2640US2011007766A1STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATESUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
- 2737US2011170569A1Semipolar iii-nitride laser diodes with etched mirrorsUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
- 2837US2011044364A1STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODESUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →