Inventor · disambiguated record
Robert W. Fathauer
Also filed as: FATHAUER ROBERT W
8 granted patents·361 citations·filing 1988–1996
89Inventor score
Top patents by PatentIndex Score
8 records- 0194US5685946AMethod of producing buried porous silicon-geramanium layers in monocrystalline silicon latticesUS ARMY·Filed 1995·Granted Nov 11, 1997·198 cites·33 claims
- 0290US5010037APinhole-free growth of epitaxial CoSi2 film on Si(111)CALIFORNIA INST OF TECHN·Filed 1988·Granted Apr 23, 1991·73 cites·14 claims
- 0367US5421958ASelective formation of porous siliconUS ARMY·Filed 1993·Granted Jun 6, 1995·43 cites·13 claims
- 0456US5757024ABuried porous silicon-germanium layers in monocrystalline silicon latticesUS ARMY·Filed 1996·Granted May 26, 1998·19 cites·18 claims
- 0545US5365054AOptical detector having a plurality of matrix layers with cobalt disilicide particles embedded thereinUS ARMY·Filed 1993·Granted Nov 15, 1994·8 cites·22 claims
- 0645US5075243AFabrication of nanometer single crystal metallic CoSi2 structures on SiNASA·Filed 1991·Granted Dec 24, 1991·15 cites·16 claims
- 0739US5273617AMethod of forming silicon structures with selectable optical characteristicsUS ARMY·Filed 1992·Granted Dec 28, 1993·4 cites·5 claims
- 0829US6387781B1Method of forming three-dimensional semiconductors structuresNASA·Filed 1990·Granted May 14, 2002·1 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →