Inventor · disambiguated record
Robert J. Gauthier, Jr.
Also filed as: GAUTHIER JR ROBERT · GAUTHIER JR ROBERT J · GAUTHIER JR ROBERT JR · GAUTHIER ROBERT
19 granted patents·12 pending applications·153 citations·filing 1988–2024
90Inventor score
Top patents by PatentIndex Score
31 records- 0189US11728381B2Electrostatic discharge (ESD) device with improved turn-on voltageGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 0286US7709896B2ESD protection device and methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 4, 2010·15 cites·26 claims
- 0385US11848324B2Efuse inside and gate structure on triple-well regionGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 19, 2023·1 cites·20 claims
- 0478US11349304B2Structure and method for controlling electrostatic discharge (ESD) event in resistor-capacitor circuitGLOBALFOUNDRIES US INC·Filed 2020·Granted May 31, 2022·1 cites·18 claims
- 0573US4976683APeritoneal dialysis methodABBOTT LAB·Filed 1988·Granted Dec 11, 1990·134 cites·24 claims
- 0666US12237407B2Heterojunction bipolar transistor with amorphous semiconductor regionsGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 25, 2025·0 cites·19 claims
- 0765US12068308B2Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor wellGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 0864US12324248B2Electrostatic discharge device with pinch resistorGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 0962US11444076B2Integrated circuit structure with avalanche junction to doped semiconductor over semiconductor wellGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 13, 2022·0 cites·14 claims
- 1062US2025318273A1Diode formation with backside power delivery networkIBM·Filed 2024·Application pending·0 cites
- 1162US2025380492A1Integrated passive device region with increased substrate thicknessIBM·Filed 2024·Application pending·0 cites
- 1261US12471386B2Electrostatic discharge protection devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 1360US12376385B2Integrated circuit structures with conductive pathway through resistive semiconductor materialGLOBALFOUNDRIES US INC·Filed 2022·Granted Jul 29, 2025·0 cites·19 claims
- 1460US2025192049A1Integration of bipolar device and backside power delivery networkIBM·Filed 2023·Application pending·0 cites
- 1560US2025203999A1Substrate-less passive device solution for backside power distribution networkIBM·Filed 2023·Application pending·0 cites
- 1660US2025318277A1Backside contacts to control the voltage of the substrateIBM·Filed 2024·Application pending·0 cites
- 1760US2025331292A1Backside ballast resistorIBM·Filed 2024·Application pending·0 cites
- 1859US2025374624A1Passive device integrated into backside power delivery networkIBM·Filed 2024·Application pending·0 cites
- 1957US12356644B2Gate tunnel current-triggered semiconductor controlled rectifierGLOBALFOUNDRIES US INC·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2057US12293994B2Semiconductor device integration with an amorphous regionGLOBALFOUNDRIES US INC·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 2157US12191300B2Integrated circuit structure with resistive semiconductor material for back wellGLOBALFOUNDRIES US INC·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 2257US2025393272A1Bjt with backside base contactIBM·Filed 2024·Application pending·0 cites
- 2357US2025185352A1Integration of a vertical diode and a transistorIBM·Filed 2023·Application pending·0 cites
- 2457US2025393314A1Vertical silicon controlled rectifiersIBM·Filed 2024·Application pending·0 cites
- 2556US12057444B2Operating voltage-triggered semiconductor controlled rectifierGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 2656US11955472B2Semiconductor-controlled rectifier with low trigger voltage for electrostatic discharge protectionGLOBALFOUNDRIES US INC·Filed 2021·Granted Apr 9, 2024·0 cites·20 claims
- 2753US12471385B2Electrostatic discharge protection devices with multiple-depth trench isolationGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 2853US11398565B2Silicon controlled rectifier with a gate electrode for electrostatic discharge protectionGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jul 26, 2022·0 cites·20 claims
- 2953US2024234409A1Structure including n-type well over n-type deep well and between pair of p-type wells for esd protectionGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3052US11088075B2Layout structures with multiple fingers of multiple lengthsGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 10, 2021·0 cites·20 claims
- 3134US2009026492A1Lateral junction breakdown triggered silicon controlled rectifier based electrostatic discharge protection deviceCHATTY KIRAN V·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →