Inventor · disambiguated record
Roksana Golizadeh Mojarad
Also filed as: GOLIZADEH MOJARAD ROKSANA
7 granted patents·2 pending applications·45 citations·filing 2011–2015
84Inventor score
Top patents by PatentIndex Score
9 records- 0194US8836056B2Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layerOGUZ KAAN·Filed 2012·Granted Sep 16, 2014·18 cites·15 claims
- 0287US9166150B2Electric field enhanced spin transfer torque memory (STTM) deviceDOYLE BRIAN S·Filed 2012·Granted Oct 20, 2015·9 cites·24 claims
- 0384US9548441B2Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layerINTEL CORP·Filed 2015·Granted Jan 17, 2017·2 cites·11 claims
- 0484US8980650B2Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layerOGUZ KAAN·Filed 2014·Granted Mar 17, 2015·5 cites·5 claims
- 0582US9437808B2Electric field enhanced spin transfer torque memory (STTM) deviceINTEL CORP·Filed 2015·Granted Sep 6, 2016·5 cites·17 claims
- 0677US9779794B2Techniques for forming spin-transfer torque memory (STTM) elements having annular contactsINTEL CORP·Filed 2014·Granted Oct 3, 2017·5 cites·25 claims
- 0761US9236562B2Balancing energy barrier between states in perpendicular magnetic tunnel junctionsKUO CHARLES C·Filed 2011·Granted Jan 12, 2016·1 cites·11 claims
- 0836US2015091110A1Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic LayersKUO CHARLES C·Filed 2013·Application pending·0 cites
- 0934US2014204661A1Memory with elements having two stacked magnetic tunneling junction (mtj) devicesDOYLE BRIAN S·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →