Inventor · disambiguated record
Roger Lee
Also filed as: CHEVALLIER CHRISTOPHE J · LEE ROGER · LEE ROGER R · LEE ROGER RUOJIA
125 granted patents·3 pending applications·4,191 citations·filing 1991–2021
99Inventor score
Files withMICRON TECHNOLOGY INC100SEMICONDUCTOR MFG INT SHANGHAI9MICRON SEMICONDUCTOR INC4SEMICONDUCTOR MFG INT SHANGHAI CORP4XIAO DEYUAN4
Top patents by PatentIndex Score
128 records- 0197US6383861B1Method of fabricating a dual gate dielectricMICRON TECHNOLOGY INC·Filed 1999·Granted May 7, 2002·158 cites·12 claims
- 0297US6358756B1Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment schemeMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 19, 2002·163 cites·35 claims
- 0397US6137133AProgrammable non-volatile memory cell and method of forming a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 24, 2000·130 cites·25 claims
- 0497US5751039AProgrammable non-volatile memory cell and method of forming a non-volatile memory cellMICRON TECHNOLOGY INC·Filed 1997·Granted May 12, 1998·142 cites·21 claims
- 0597US5424993AProgramming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory deviceMICRON TECHNOLOGY INC·Filed 1993·Granted Jun 13, 1995·146 cites·42 claims
- 0696US6498062B2DRAM access transistorMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 24, 2002·121 cites·17 claims
- 0796US6159818AMethod of forming a container capacitor structureMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 12, 2000·88 cites·6 claims
- 0895US5257225AMethod for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitudeMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 26, 1993·125 cites·25 claims
- 0995US5168073AMethod for fabricating storage node capacitor having tungsten and etched tin storage node capacitor plateMICRON TECHNOLOGY INC·Filed 1991·Granted Dec 1, 1992·137 cites·24 claims
- 1094US6521931B2Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment schemeMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 18, 2003·47 cites·34 claims
- 1194US5260593ASemiconductor floating gate device having improved channel-floating gate interactionMICRON TECHNOLOGY INC·Filed 1991·Granted Nov 9, 1993·116 cites·11 claims
- 1294US5200652AProgrammable/reprogrammable structure combining both antifuse and fuse elementsMICRON TECHNOLOGY INC·Filed 1991·Granted Apr 6, 1993·118 cites·20 claims
- 1394US5175120AMethod of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistorsMICRON TECHNOLOGY INC·Filed 1991·Granted Dec 29, 1992·120 cites·28 claims
- 1490US5680350AMethod for narrowing threshold voltage distribution in a block erased flash memory arrayMICRON TECHNOLOGY INC·Filed 1994·Granted Oct 21, 1997·79 cites·15 claims
- 1590US5192703AMethod of making tungsten contact core stack capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Mar 9, 1993·86 cites·17 claims
- 1689US7335543B2MOS device for high voltage operation and method of manufactureSEMICONDUCTOR MFG INT SHANGHAI·Filed 2004·Granted Feb 26, 2008·52 cites·9 claims
- 1789US6620680B2Method of forming a contact structure and a container capacitor structureMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 16, 2003·40 cites·19 claims
- 1889US5661054AMethod of forming a non-volatile memory arrayMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 26, 1997·48 cites·21 claims
- 1989US5257222AAntifuse programming by transistor snap-backMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 26, 1993·69 cites·22 claims
- 2088US8884363B2System and method for integrated circuits with cylindrical gate structuresXIAO DE YUAN·Filed 2010·Granted Nov 11, 2014·12 cites·21 claims
- 2188US6661051B1Container capacitor structure and method of formation thereofMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 9, 2003·22 cites·5 claims
- 2288US6653154B2Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structureMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 25, 2003·45 cites·20 claims
- 2388US6333240B1Method of spacing a capacitor from a contact siteMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 25, 2001·22 cites·3 claims
- 2488US6329263B1Method of forming a container capacitor structureMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 11, 2001·24 cites·6 claims
- 2588US5781477AFlash memory system having fast erase operationMICRON QUANTUM DEVICES INC·Filed 1996·Granted Jul 14, 1998·67 cites·46 claims
- 2687US5301159AAnti-fuse circuit and method wherein the read operation and programming operation are reversedMICRON TECHNOLOGY INC·Filed 1993·Granted Apr 5, 1994·52 cites·20 claims
- 2787US5292681AMethod of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistorsMICRON SEMICONDUCTOR INC·Filed 1993·Granted Mar 8, 1994·64 cites·28 claims
- 2887US5229316ASemiconductor processing method for forming substrate isolation trenchesMICRON TECHNOLOGY INC·Filed 1992·Granted Jul 20, 1993·95 cites·24 claims
- 2987US5159430AVertically integrated oxygen-implanted polysilicon resistorMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 27, 1992·68 cites·17 claims
- 3086US6391735B1Container capacitor structureMICRON TECHNOLOGY INC·Filed 2000·Granted May 21, 2002·20 cites·6 claims
- 3185US5780891ANonvolatile floating gate memory with improved interploy dielectricMICRON TECHNOLOGY INC·Filed 1996·Granted Jul 14, 1998·44 cites·3 claims
- 3285US5282158ATransistor antifuse for a programmable ROMMICRON TECHNOLOGY INC·Filed 1992·Granted Jan 25, 1994·81 cites·3 claims
- 3385US5270240AFour poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline silicon digit linesMICRON SEMICONDUCTOR INC·Filed 1992·Granted Dec 14, 1993·55 cites·21 claims
- 3484US6528834B1Container capacitor structure and method of formation thereofMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 4, 2003·17 cites·10 claims
- 3584US6243299B1Flash memory system having fast erase operationMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 5, 2001·52 cites·11 claims
- 3684US5244826AMethod of forming an array of finned memory cell capacitors on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1992·Granted Sep 14, 1993·50 cites·20 claims
- 3784US5233206ADouble digitlines for multiple programming of prom applications and other anti-fuse circuit element applicationsMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 3, 1993·81 cites·13 claims
- 3883US6753565B1Container capacitor array having a common top capacitor plateMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 22, 2004·16 cites·4 claims
- 3983US5262662AStorage node capacitor having tungsten and etched tin storage node capacitor plateMICRON TECHNOLOGY INC·Filed 1992·Granted Nov 16, 1993·55 cites·19 claims
- 4083US5250459AElectrically programmable low resistive antifuse elementMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 5, 1993·73 cites·15 claims
- 4183US5208177ALocal field enhancement for better programmability of antifuse PROMMICRON TECHNOLOGY INC·Filed 1992·Granted May 4, 1993·74 cites·32 claims
- 4282US6608342B1Container capacitor structure and method of formation thereofMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 19, 2003·14 cites·11 claims
- 4382US6395600B1Method of forming a contact structure and a container capacitor structureMICRON TECHNOLOGY INC·Filed 1999·Granted May 28, 2002·41 cites·3 claims
- 4482US5323038AArray of finned memory cell capacitors on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1993·Granted Jun 21, 1994·45 cites·9 claims
- 4582US5297082AShallow trench source eprom cellMICRON SEMICONDUCTOR INC·Filed 1992·Granted Mar 22, 1994·34 cites·18 claims
- 4681US8383445B2Method and device for CMOS image sensing with multiple gate oxide thicknessesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2010·Granted Feb 26, 2013·6 cites·11 claims
- 4781US6780652B2Self-aligned MRAM contact and method of fabricationMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 24, 2004·28 cites·42 claims
- 4881US6693319B1Container capacitor structure and method of formation thereofMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 17, 2004·14 cites·7 claims
- 4981US5917755AFlash memory system having fast erase operationMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 29, 1999·40 cites·19 claims
- 5081US5736444AMethods of forming non-volatile memory arraysMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 7, 1998·28 cites·14 claims
Showing the top 50 of 128 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →