Inventor · disambiguated record
Robert Mcfadden
Also filed as: MCFADDEN ROBERT · MCFADDEN ROBERT S
3 granted patents·2 pending applications·263 citations·filing 1999–2004
79Inventor score
Top patents by PatentIndex Score
5 records- 0194US6610615B1Plasma nitridation for reduced leakage gate dielectric layersINTEL CORP·Filed 2000·Granted Aug 26, 2003·127 cites·23 claims
- 0293US6541343B1Methods of making field effect transistor structure with partially isolated source/drain junctionsINTEL CORP·Filed 1999·Granted Apr 1, 2003·107 cites·21 claims
- 0383US6667251B2Plasma nitridation for reduced leakage gate dielectric layersINTEL CORP·Filed 2003·Granted Dec 23, 2003·29 cites·2 claims
- 0438US2005284371A1Deposition apparatus for providing uniform low-k dielectricMCFADDEN ROBERT S·Filed 2004·Application pending·0 cites
- 0537US2003136985A1Field effect transistor structure with partially isolated source/drain junctions and methods of making sameFiled 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Robert Mcfadden files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →