Inventor · disambiguated record
Robert Paiz
Also filed as: PAIZ ROBERT
17 granted patents·404 citations·filing 1996–1998
95Inventor score
Top patents by PatentIndex Score
17 records- 0186US6194283B1High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacersADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 27, 2001·89 cites·9 claims
- 0284US5918133ASemiconductor device having dual gate dielectric thickness along the channel and fabrication thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·57 cites·16 claims
- 0383US6148832AMethod and apparatus for in-situ cleaning of polysilicon-coated quartz furnacesADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 21, 2000·43 cites·10 claims
- 0477US6051487ASemiconductor device fabrication using a sacrificial plug for defining a region for a gate electrodeADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 18, 2000·40 cites·21 claims
- 0571US5851307AMethod for in-situ cleaning of polysilicon-coated quartz furnacesADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·23 cites·8 claims
- 0664US5942787ASmall gate electrode MOSFETADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 24, 1999·30 cites·7 claims
- 0753US6160316AIntegrated circuit utilizing an air gap to reduce capacitance between adjacent metal linewidthsADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 12, 2000·18 cites·8 claims
- 0853US5863818AMultilevel transistor fabrication method having an inverted, upper level transistorADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 26, 1999·15 cites·15 claims
- 0952US6309936B1Integrated formation of LDD and non-LDD semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 30, 2001·13 cites·25 claims
- 1052US5946581AMethod of manufacturing a semiconductor device by doping an active region after formation of a relatively thick oxide layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 31, 1999·17 cites·29 claims
- 1149US6140191AMethod of making high performance MOSFET with integrated simultaneous formation of source/drain and gate regionsADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 31, 2000·14 cites·27 claims
- 1246US6727569B1Method of making enhanced trench oxide with low temperature nitrogen integrationADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 27, 2004·13 cites·13 claims
- 1345US6037244AMethod of manufacturing a semiconductor device using advanced contact formationADVANCED MICRODEVICES INC·Filed 1997·Granted Mar 14, 2000·12 cites·31 claims
- 1443US6043533AMethod of integrating Ldd implantation for CMOS device fabricationADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 28, 2000·8 cites·7 claims
- 1535US6214123B1Chemical vapor deposition systems and methods for depositing films on semiconductor wafersADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 10, 2001·4 cites·18 claims
- 1635US5970350ASemiconductor device having a thin gate oxide and method of manufacture thereofADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 19, 1999·6 cites·20 claims
- 1732US5929496AMethod and structure for channel length reduction in insulated gate field effect transistorsFiled 1997·Granted Jul 27, 1999·2 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Robert Paiz files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →