Inventor · disambiguated record
Roy E. Scheuerlein
Also filed as: SCHEUERLEIN ROY · SCHEUERLEIN ROY E · SCHEUERLEIN ROY EDWIN
270 granted patents·19 pending applications·15,056 citations·filing 1979–2016
99Inventor score
Top patents by PatentIndex Score
289 records- 0199US8102698B2Structure and method for biasing phase change memory array for reliable writingSCHEUERLEIN ROY E·Filed 2010·Granted Jan 24, 2012·113 cites·30 claims
- 0299US7859884B2Structure and method for biasing phase change memory array for reliable writingSANDISK 3D LLC·Filed 2007·Granted Dec 28, 2010·121 cites·20 claims
- 0399US7851851B2Three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Dec 14, 2010·232 cites·20 claims
- 0499US7848145B2Three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Dec 7, 2010·227 cites·13 claims
- 0599US7829875B2Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuseSANDISK 3D LLC·Filed 2006·Granted Nov 9, 2010·132 cites·31 claims
- 0699US7808038B2Method of making three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Oct 5, 2010·218 cites·20 claims
- 0799US7745265B2Method of making three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Jun 29, 2010·219 cites·8 claims
- 0899US7575973B2Method of making three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Aug 18, 2009·330 cites·14 claims
- 0999US7514321B2Method of making three dimensional NAND memorySANDISK 3D LLC·Filed 2007·Granted Apr 7, 2009·229 cites·5 claims
- 1099US7426128B2Switchable resistive memory with opposite polarity write pulsesSANDISK 3D LLC·Filed 2005·Granted Sep 16, 2008·148 cites·31 claims
- 1199US7317641B2Volatile memory cell two-pass writing methodSANDISK CORP·Filed 2005·Granted Jan 8, 2008·132 cites·58 claims
- 1299US7307268B2Structure and method for biasing phase change memory array for reliable writingSANDISK CORP·Filed 2005·Granted Dec 11, 2007·96 cites·10 claims
- 1399US7233024B2Three-dimensional memory device incorporating segmented bit line memory arraySANDISK 3D LLC·Filed 2003·Granted Jun 19, 2007·239 cites·37 claims
- 1499US7177191B2Integrated circuit including memory array incorporating multiple types of NAND string structuresSANDISK 3D LLC·Filed 2004·Granted Feb 13, 2007·335 cites·29 claims
- 1599US7177169B2Word line arrangement having multi-layer word line segments for three-dimensional memory arraySANDISK 3D LLC·Filed 2005·Granted Feb 13, 2007·128 cites·32 claims
- 1699US6879505B2Word line arrangement having multi-layer word line segments for three-dimensional memory arrayMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 12, 2005·250 cites·47 claims
- 1799US6631085B2Three-dimensional memory array incorporating serial chain diode stackMATRIX SEMICONDUCTOR INC·Filed 2001·Granted Oct 7, 2003·278 cites·56 claims
- 1899US5991193AVoltage biasing for magnetic ram with magnetic tunnel memory cellsIBM·Filed 1997·Granted Nov 23, 1999·305 cites·43 claims
- 1999US5793697ARead circuit for magnetic memory array using magnetic tunnel junction devicesIBM·Filed 1997·Granted Aug 11, 1998·332 cites·4 claims
- 2099US5640343AMagnetic memory array using magnetic tunnel junction devices in the memory cellsIBM·Filed 1996·Granted Jun 17, 1997·1.2k cites·13 claims
- 2198US9646688B2Three dimensional non-volatile storage with connected word linesSANDISK 3D LLC·Filed 2015·Granted May 9, 2017·12 cites·14 claims
- 2298US7733685B2Cross point memory cell with distributed diodes and method of making sameSANDISK 3D LLC·Filed 2008·Granted Jun 8, 2010·102 cites·29 claims
- 2398US7667999B2Method to program a memory cell comprising a carbon nanotube fabric and a steering elementSANDISK 3D LLC·Filed 2007·Granted Feb 23, 2010·59 cites·13 claims
- 2498US7656734B2Methods and apparatus for extending the effective thermal operating range of a memorySANDISK 3D LLC·Filed 2007·Granted Feb 2, 2010·81 cites·17 claims
- 2598US7362604B2Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elementsSANDISK 3D LLC·Filed 2005·Granted Apr 22, 2008·73 cites·60 claims
- 2698US7345907B2Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elementsSANDISK 3D LLC·Filed 2005·Granted Mar 18, 2008·91 cites·46 claims
- 2798US7233522B2NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of sameSANDISK 3D LLC·Filed 2003·Granted Jun 19, 2007·320 cites·44 claims
- 2898US7221588B2Memory array incorporating memory cells arranged in NAND stringsSANDISK 3D LLC·Filed 2003·Granted May 22, 2007·259 cites·15 claims
- 2998US7054219B1Transistor layout configuration for tight-pitched memory array linesMATRIX SEMICONDUCTOR INC·Filed 2005·Granted May 30, 2006·91 cites·28 claims
- 3098US7023739B2NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of sameMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 4, 2006·299 cites·88 claims
- 3198US7005350B2Method for fabricating programmable memory array structures incorporating series-connected transistor stringsMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Feb 28, 2006·453 cites·99 claims
- 3298US6856572B2Multi-headed decoder structure utilizing memory array line driver with dual purpose driver deviceMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Feb 15, 2005·175 cites·46 claims
- 3398US6618295B2Method and apparatus for biasing selected and unselected array lines when writing a memory arrayMATRIX SEMICONDUCTOR INC·Filed 2001·Granted Sep 9, 2003·189 cites·78 claims
- 3498US6335890B1Segmented write line architecture for writing magnetic random access memoriesIBM·Filed 2000·Granted Jan 1, 2002·202 cites·20 claims
- 3598US6191989B1Current sensing amplifierIBM·Filed 2000·Granted Feb 20, 2001·193 cites·23 claims
- 3698US6005800AMagnetic memory array with paired asymmetric memory cells for improved write marginIBM·Filed 1998·Granted Dec 21, 1999·241 cites·34 claims
- 3797US8618614B2Continuous mesh three dimensional non-volatile storage with vertical select devicesSCHEUERLEIN ROY E·Filed 2011·Granted Dec 31, 2013·19 cites·17 claims
- 3897US8547720B2Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word linesSAMACHISA GEORGE·Filed 2011·Granted Oct 1, 2013·39 cites·12 claims
- 3997US7935553B2Method for fabricating high density pillar structures by double patterning using positive photoresistSANDISK 3D LLC·Filed 2010·Granted May 3, 2011·27 cites·13 claims
- 4097US7869258B2Reverse set with current limit for non-volatile storageSANDISK 3D LLC·Filed 2008·Granted Jan 11, 2011·54 cites·26 claims
- 4197US7499355B2High bandwidth one time field-programmable memorySANDISK 3D LLC·Filed 2006·Granted Mar 3, 2009·71 cites·24 claims
- 4297US7474000B2High density contact to relaxed geometry layersSANDISK 3D LLC·Filed 2003·Granted Jan 6, 2009·141 cites·46 claims
- 4397US7463546B2Method for using a passive element memory array incorporating reversible polarity word line and bit line decodersSANDISK 3D LLC·Filed 2006·Granted Dec 9, 2008·71 cites·25 claims
- 4497US7243203B2Pipeline circuit for low latency memorySANDISK 3D LLC·Filed 2003·Granted Jul 10, 2007·147 cites·33 claims
- 4597US7142471B2Method and apparatus for incorporating block redundancy in a memory arraySANDISK 3D LLC·Filed 2005·Granted Nov 28, 2006·83 cites·40 claims
- 4697US7106652B2Word line arrangement having multi-layer word line segments for three-dimensional memory arrayMATRIX SEMICONDUCTOR INC·Filed 2005·Granted Sep 12, 2006·41 cites·36 claims
- 4797US7023260B2Charge pump circuit incorporating corresponding parallel charge pump stages and method thereforMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 4, 2006·149 cites·53 claims
- 4897US7002825B2Word line arrangement having segmented word linesMATRIX SEMICONDUCTOR INC·Filed 2005·Granted Feb 21, 2006·46 cites·21 claims
- 4997US6822903B2Apparatus and method for disturb-free programming of passive element memory cellsMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 23, 2004·118 cites·47 claims
- 5097US6816410B2Method for programming a three-dimensional memory array incorporating serial chain diode stackMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 9, 2004·92 cites·14 claims
Showing the top 50 of 289 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →