Inventor · disambiguated record
Roland Sittig
Also filed as: SITTIG ROLAND
22 granted patents·1 pending application·170 citations·filing 1974–2003
95Inventor score
Top patents by PatentIndex Score
23 records- 0183US4377816ASemiconductor element with zone guard ringsBBC BROWN BOVERI & CIE·Filed 1979·Granted Mar 22, 1983·27 cites·9 claims
- 0260US4223332AThyristor having an anode transverse field emitterBBC BROWN BOVERI & CIE·Filed 1978·Granted Sep 16, 1980·11 cites·8 claims
- 0359US5977611APower diode and hybrid diode, voltage limiter and freewheeling diode having the power diodeSIEMENS AG·Filed 1998·Granted Nov 2, 1999·19 cites·7 claims
- 0455US4517582AAsymmetrical thyristor with highly doped anode base layer region for optimized blocking and forward voltagesBBC BROWN BOVERI & CIE·Filed 1982·Granted May 14, 1985·13 cites·1 claims
- 0554US6410950B1Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diodeINFINEON TECHNOLOGIES AG·Filed 1998·Granted Jun 25, 2002·15 cites·59 claims
- 0653US3987476AThyristorBBC BROWN BOVERI & CIE·Filed 1974·Granted Oct 19, 1976·8 cites·4 claims
- 0750US4642669ASemiconductor device having a blocking capability in only one directionBBC BROWN BOVERI & CIE·Filed 1984·Granted Feb 10, 1987·10 cites·5 claims
- 0849US6956249B2Termination of semiconductor componentsFRAUNHOFER GES FORSCHUNG·Filed 2003·Granted Oct 18, 2005·4 cites·11 claims
- 0944US4177479AElectrical circuit with a high-frequency thyristor fired by blocking leakage currentBBC BROWN BOVERI & CIE·Filed 1978·Granted Dec 4, 1979·7 cites·4 claims
- 1042US6525374B1Semiconductor component with a high breakdown voltageINFINEON TECHNOLOGIES AG·Filed 1999·Granted Feb 25, 2003·9 cites·19 claims
- 1140US4801554AProcess for manufacturing a power semiconductor componentBBC BROWN BOVERI & CIE·Filed 1986·Granted Jan 31, 1989·8 cites·2 claims
- 1240US4386283AProcess for the cutting-off of a thyristorBBC BROWN BOVERI & CIE·Filed 1980·Granted May 31, 1983·7 cites·9 claims
- 1338US4142201ALight-controlled thyristor with anode-base surface firingBBC BROWN BOVERI & CIE·Filed 1977·Granted Feb 27, 1979·9 cites·15 claims
- 1437US6661036B1Semiconductor switches with evenly distributed fine control structuresFiled 1999·Granted Dec 9, 2003·10 cites·10 claims
- 1536US4596999APower semiconductor component and process for its manufactureBBC BROWN BOVERI & CIE·Filed 1984·Granted Jun 24, 1986·4 cites·4 claims
- 1632US4231054AThyristor with starting and generating cathode base contacts for use in rectifier circuitsBBC BROWN BOVERI & CIE·Filed 1979·Granted Oct 28, 1980·4 cites·8 claims
- 1732US2002140046A1Optimized junction termination of semiconductor componentsFiled 2002·Application pending·0 cites
- 1831US4298880APower thyristor and method of fabrication therefore utilizing control, generating, and firing gatesBBC BROWN BOVERI & CIE·Filed 1979·Granted Nov 3, 1981·1 cites·3 claims
- 1930US6426540B1Optimized border of semiconductor componentsFRAUNHOFER GES FORSCHUNG·Filed 1998·Granted Jul 30, 2002·2 cites·14 claims
- 2030US4803172AMethod of manufacturing thyristor with integrated power supply for an associated circuitSIEMENS AG·Filed 1988·Granted Feb 7, 1989·0 cites·2 claims
- 2130US4736232AThyristor with integrated power supply for an associated circuit and method for manufacture thereofSIEMENS AG·Filed 1987·Granted Apr 5, 1988·0 cites·7 claims
- 2229US4081821ABistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivityBBC BROWN BOVERI & CIE·Filed 1975·Granted Mar 28, 1978·1 cites·13 claims
- 2328US4207584ASafety device for protecting semiconductor components against excessive voltage rise ratesBBC BROWN BOVERI & CIE·Filed 1979·Granted Jun 10, 1980·1 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →