Inventor · disambiguated record
Robert S. Sposili
Also filed as: SPOSILI ROBERT S
19 granted patents·7 pending applications·951 citations·filing 1999–2012
96Inventor score
Top patents by PatentIndex Score
26 records- 0197US7319056B2Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidificationUNIV COLUMBIA·Filed 2005·Granted Jan 15, 2008·43 cites·6 claims
- 0297US6555449B1Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidficationUNIV COLUMBIA·Filed 1999·Granted Apr 29, 2003·167 cites·23 claims
- 0396US6635554B1Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperaturesUNIV COLUMBIA·Filed 2001·Granted Oct 21, 2003·105 cites·21 claims
- 0496US6621044B2Dual-beam materials-processing systemANVIK CORP·Filed 2001·Granted Sep 16, 2003·99 cites·36 claims
- 0596US6577380B1High-throughput materials processing systemANVIK CORP·Filed 2000·Granted Jun 10, 2003·122 cites·22 claims
- 0695US7029996B2Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidificationUNIV COLUMBIA·Filed 2002·Granted Apr 18, 2006·60 cites·8 claims
- 0795US6908835B2Method and system for providing a single-scan, continuous motion sequential lateral solidificationUNIV COLUMBIA·Filed 2001·Granted Jun 21, 2005·103 cites·24 claims
- 0895US6830993B1Surface planarization of thin silicon films during and after processing by the sequential lateral solidification methodUNIV COLUMBIA·Filed 2000·Granted Dec 14, 2004·79 cites·9 claims
- 0993US6573531B1Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperaturesUNIV COLUMBIA·Filed 1999·Granted Jun 3, 2003·121 cites·21 claims
- 1091US7679028B2Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidificationUNIV COLUMBIA·Filed 2007·Granted Mar 16, 2010·10 cites·6 claims
- 1185US8278659B2Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereonIM JAMES S·Filed 2009·Granted Oct 2, 2012·5 cites·14 claims
- 1280US7704862B2Surface planarization of thin silicon films during and after processing by the sequential lateral solidification methodUNIV COLUMBIA·Filed 2007·Granted Apr 27, 2010·5 cites·8 claims
- 1379US7220660B2Surface planarization of thin silicon films during and after processing by the sequential lateral solidification methodUNIV COLUMBIA·Filed 2004·Granted May 22, 2007·17 cites·4 claims
- 1476US7608144B2Pulse sequencing lateral growth methodSHARP LAB OF AMERICA INC·Filed 2005·Granted Oct 27, 2009·3 cites·17 claims
- 1569US6881686B1Low-fluence irradiation for lateral crystallization enabled by a heating sourceSHARP LAB OF AMERICA INC·Filed 2004·Granted Apr 19, 2005·8 cites·19 claims
- 1666US7056843B2Low-fluence irradiation for lateral crystallization enabled by a heating sourceSHARP LAB OF AMERICA INC·Filed 2005·Granted Jun 6, 2006·1 cites·11 claims
- 1762US8859436B2Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereonIM JAMES S·Filed 2009·Granted Oct 14, 2014·0 cites·30 claims
- 1862US8680427B2Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereonIM JAMES S·Filed 2009·Granted Mar 25, 2014·0 cites·16 claims
- 1957US2013009074A1Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereonIM JAMES S·Filed 2012·Application pending·0 cites
- 2056US7018468B2Process for long crystal lateral growth in silicon films by UV and IR pulse sequencingSHARP LAB OF AMERICA INC·Filed 2003·Granted Mar 28, 2006·3 cites·16 claims
- 2148US2010102323A1Directionally Annealed Silicon Film Having a (100)-Normal Crystallographical OrientationSPOSILI ROBERT S·Filed 2008·Application pending·0 cites
- 2245US2011068342A1Laser Process for Minimizing Variations in Transistor Threshold VoltagesAFENTAKIS THEMISTOKLES·Filed 2009·Application pending·0 cites
- 2343US2009250700A1Crystalline Semiconductor Stripe TransistorAFENTAKIS THEMISTOKLES·Filed 2008·Application pending·0 cites
- 2443US2009250791A1Crystalline Semiconductor StripesAFENTAKIS THEMISTOKLES·Filed 2008·Application pending·0 cites
- 2543US2003119286A1Method for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidificationFiled 2002·Application pending·0 cites
- 2641US2009078940A1Location-controlled crystal seedingSHARP LAB OF AMERICA INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →