Inventor · disambiguated record
Robert W. Standley
Also filed as: STANDLEY ROBERT · STANDLEY ROBERT W · Standley Robert Wendell
21 granted patents·6 pending applications·353 citations·filing 1986–2023
95Inventor score
Files withGLOBALWAFERS CO LTD10MEMC ELECTRONIC MATERIALS9GLOBAL WAFERS CO LTD2SUNEDISON SEMICONDUCTOR LTD UEN201334164H2AMOCO CORP1
Top patents by PatentIndex Score
27 records- 0196US8846493B2Methods for producing silicon on insulator structures having high resistivity regions in the handle waferLIBBERT JEFFREY L·Filed 2012·Granted Sep 30, 2014·68 cites·35 claims
- 0295US6444027B1Modified susceptor for use in chemical vapor deposition processMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Sep 3, 2002·82 cites·42 claims
- 0391US11739437B2Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growthGLOBALWAFERS CO LTD·Filed 2019·Granted Aug 29, 2023·2 cites·17 claims
- 0489US10224233B2High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantationSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Mar 5, 2019·5 cites·21 claims
- 0589US6596095B2Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Jul 22, 2003·42 cites·35 claims
- 0688US6652650B2Modified susceptor for use in chemical vapor deposition processMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Nov 25, 2003·35 cites·6 claims
- 0787US11532501B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2021·Granted Dec 20, 2022·1 cites·52 claims
- 0887US10793969B2Sample rod growth and resistivity measurement during single crystal silicon ingot productionGLOBAL WAFERS CO LTD·Filed 2018·Granted Oct 6, 2020·2 cites·18 claims
- 0986US10943813B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 9, 2021·2 cites·33 claims
- 1086US10403541B2High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—N2 co-implantationSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Sep 3, 2019·3 cites·25 claims
- 1186US4673589APhotoconducting amorphous carbonAMOCO CORP·Filed 1986·Granted Jun 16, 1987·58 cites·19 claims
- 1284US10920337B2Methods for forming single crystal silicon ingots with improved resistivity controlSUNEDISON SEMICONDUCTOR LTD·Filed 2017·Granted Feb 16, 2021·1 cites·14 claims
- 1383US11942360B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·31 claims
- 1483US10781532B2Methods for determining the resistivity of a polycrystalline silicon meltGLOBAL WAFERS CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·19 claims
- 1582US11887885B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2022·Granted Jan 30, 2024·0 cites·40 claims
- 1679US2023340690A1Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growthGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 1776US11626318B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·35 claims
- 1874US6030887AFlattening process for epitaxial semiconductor wafersMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Feb 29, 2000·51 cites·46 claims
- 1969US12024789B2Methods for forming single crystal silicon ingots with improved resistivity controlGLOBALWAFERS CO LTD·Filed 2020·Granted Jul 2, 2024·0 cites·7 claims
- 2066US11075109B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2019·Granted Jul 27, 2021·0 cites·31 claims
- 2163US10796945B2High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—N2 co-implantationGLOBALWAFERS CO LTD·Filed 2019·Granted Oct 6, 2020·0 cites·20 claims
- 2249US2010130021A1Method for processing a silicon-on-insulator structureMEMC ELECTRONIC MATERIALS·Filed 2009·Application pending·0 cites
- 2345US8735261B2Method and system for stripping the edge of a semiconductor waferSTANDLEY ROBERT W·Filed 2009·Granted May 27, 2014·0 cites·15 claims
- 2444US2006075960A1Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitatesMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 2541US2006138601A1Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafersMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 2636US2002127766A1Semiconductor wafer manufacturing processMEMC ELECTRONIC MATERIALS·Filed 2001·Application pending·0 cites
- 2736US2002179006A1Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitatesMEMC ELECTRONIC MATERIALS·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →