Inventor · disambiguated record
Robert M. Wallace
Also filed as: WALLACE ROBERT · WALLACE ROBERT M · WALLACE ROBERT MALCOLM
55 granted patents·5 pending applications·4,905 citations·filing 1983–2025
99Inventor score
Files withTEXAS INSTRUMENTS INC40BORGWARNER INC9SAMSUNG ELECTRONICS CO LTD2UNIV NORTH TEXAS2UNIV TEXAS2
Top patents by PatentIndex Score
60 records- 0199US6020243AZirconium and/or hafnium silicon-oxynitride gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 1, 2000·494 cites·33 claims
- 0299US6013553AZirconium and/or hafnium oxynitride gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Jan 11, 2000·1.1k cites·32 claims
- 0399US5610438AMicro-mechanical device with non-evaporable getterTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 11, 1997·539 cites·16 claims
- 0498US6024801AMethod of cleaning and treating a semiconductor device including a micromechanical deviceTEXAS INSTRUMENTS INC·Filed 1996·Granted Feb 15, 2000·179 cites·23 claims
- 0598US5606177ASilicon oxide resonant tunneling diode structureTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 25, 1997·248 cites·9 claims
- 0698US5512374APFPE coatings for micro-mechanical devicesTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 30, 1996·163 cites·27 claims
- 0798US5482564AMethod of unsticking components of micro-mechanical devicesTEXAS INSTRUMENTS INC·Filed 1994·Granted Jan 9, 1996·168 cites·20 claims
- 0897US6291867B1Zirconium and/or hafnium silicon-oxynitride gate dielectricTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 18, 2001·248 cites·16 claims
- 0997US5316793ADirected effusive beam atomic layer epitaxy system and methodTEXAS INSTRUMENTS INC·Filed 1992·Granted May 31, 1994·165 cites·16 claims
- 1096US6291866B1Zirconium and/or hafnium oxynitride gate dielectricTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 18, 2001·165 cites·20 claims
- 1196US5523878ASelf-assembled monolayer coating for micro-mechanical devicesTEXAS INSTRUMENTS INC·Filed 1994·Granted Jun 4, 1996·195 cites·8 claims
- 1296US5453659AAnode plate for flat panel display having integrated getterTEXAS INSTRUMENTS INC·Filed 1994·Granted Sep 26, 1995·89 cites·21 claims
- 1394US6624944B1Fluorinated coating for an optical elementTEXAS INSTRUMENTS INC·Filed 1997·Granted Sep 23, 2003·141 cites·24 claims
- 1494US5614785AAnode plate for flat panel display having silicon getterTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 25, 1997·110 cites·20 claims
- 1592US8309438B2Synthesizing graphene from metal-carbon solutions using ion implantationCOLOMBO LUIGI·Filed 2010·Granted Nov 13, 2012·13 cites·11 claims
- 1692US6552388B2Hafnium nitride gate dielectricTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 22, 2003·49 cites·14 claims
- 1792US6150242AMethod of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diodeTEXAS INSTRUMENTS INC·Filed 1999·Granted Nov 21, 2000·125 cites·12 claims
- 1892US4567432AApparatus for testing integrated circuitsTEXAS INSTRUMENTS INC·Filed 1983·Granted Jan 28, 1986·172 cites·10 claims
- 1990US6436801B1Hafnium nitride gate dielectricTEXAS INSTRUMENTS INC·Filed 2000·Granted Aug 20, 2002·40 cites·16 claims
- 2090US5689151AAnode plate for flat panel display having integrated getterTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 18, 1997·66 cites·14 claims
- 2189US5520563AMethod of making a field emission device anode plate having an integrated getterTEXAS INSTRUMENTS INC·Filed 1995·Granted May 28, 1996·51 cites·21 claims
- 2288US10100785B2Compressor stage EGR injectionBORGWARNER INC·Filed 2016·Granted Oct 16, 2018·4 cites·14 claims
- 2386US8461028B2Synthesizing graphene from metal-carbon solutions using ion implantationUNIV TEXAS·Filed 2012·Granted Jun 11, 2013·6 cites·13 claims
- 2484US10947931B2Compressor stage EGR injectionBORGWARNER INC·Filed 2018·Granted Mar 16, 2021·2 cites·18 claims
- 2584US10731546B2Diffuser in wastegate turbine housingsBORGWARNER INC·Filed 2017·Granted Aug 4, 2020·6 cites·4 claims
- 2679US6841439B1High permittivity silicate gate dielectricTEXAS INSTRUMENTS INC·Filed 1998·Granted Jan 11, 2005·52 cites·5 claims
- 2776US6784507B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 31, 2004·19 cites·5 claims
- 2876US6258637B1Method for thin film deposition on single-crystal semiconductor substratesTEXAS INSTRUMENTS INC·Filed 1999·Granted Jul 10, 2001·40 cites·12 claims
- 2976US2025243875A1Controlled area progression diffuserBORGWARNER INC·Filed 2025·Application pending·0 cites
- 3073US6335238B1Integrated dielectric and methodTEXAS INSTRUMENTS INC·Filed 1998·Granted Jan 1, 2002·32 cites·25 claims
- 3172US6159829AMemory device using movement of protonsFiled 1998·Granted Dec 12, 2000·36 cites·15 claims
- 3271US11965470B2High efficiency turbocharger with EGR systemBORGWARNER INC·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 3371US7115461B2High permittivity silicate gate dielectricTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 3, 2006·13 cites·20 claims
- 3471US6140243ALow temperature process for post-etch defluoridation of metalsTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 31, 2000·39 cites·15 claims
- 3566US11408362B2High efficiency turbocharger with EGR systemBORGWARNER INC·Filed 2019·Granted Aug 9, 2022·0 cites·12 claims
- 3663US9932888B2Variable geometry turbochargerBORGWARNER INC·Filed 2016·Granted Apr 3, 2018·1 cites·14 claims
- 3763US5352330AProcess for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorptionTEXAS INSTRUMENTS INC·Filed 1992·Granted Oct 4, 1994·33 cites·20 claims
- 3861US6020247AMethod for thin film deposition on single-crystal semiconductor substratesTEXAS INSTRUMENTS INC·Filed 1997·Granted Feb 1, 2000·22 cites·16 claims
- 3960US11081590B2Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V materialSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·8 claims
- 4059US6420729B2Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectricsTEXAS INSTRUMENTS INC·Filed 2000·Granted Jul 16, 2002·6 cites·8 claims
- 4159US2025354565A1Controlled Area Progression Vaned DiffuserBORGWARNER INC·Filed 2025·Application pending·0 cites
- 4258US6245606B1Low temperature method for forming a thin, uniform layer of aluminum oxideTEXAS INSTRUMENTS INC·Filed 1999·Granted Jun 12, 2001·21 cites·20 claims
- 4354US6613698B2Lower temperature method for forming high quality silicon-nitrogen dielectricsTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 2, 2003·3 cites·21 claims
- 4454US6277681B1Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectricsTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 21, 2001·18 cites·13 claims
- 4553US10475930B2Method of forming crystalline oxides on III-V materialsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 12, 2019·0 cites·7 claims
- 4653US6071751ADeuterium sintering with rapid quenchingTEXAS INSTRUMENTS INC·Filed 1998·Granted Jun 6, 2000·17 cites·7 claims
- 4752US6468856B2High charge storage density integrated circuit capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted Oct 22, 2002·3 cites·15 claims
- 4850US7288171B2Method for using field emitter arrays in chemical and biological hazard mitigation and remediationUNIV NORTH TEXAS·Filed 2002·Granted Oct 30, 2007·0 cites·60 claims
- 4950US6933235B2Method for removing contaminants on a substrateUNIV NORTH TEXAS·Filed 2002·Granted Aug 23, 2005·4 cites·14 claims
- 5046US6143634ASemiconductor process with deuterium predominance at high temperatureTEXAS INSTRUMENTS INC·Filed 1998·Granted Nov 7, 2000·12 cites·13 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →