Inventor · disambiguated record
Robertus A. M. Wolters
Also filed as: WOLTERS ROBERTUS A M
14 granted patents·373 citations·filing 1991–2008
93Inventor score
Top patents by PatentIndex Score
14 records- 0189US5122477AMethod of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodesPHILIPS CORP·Filed 1991·Granted Jun 16, 1992·93 cites·11 claims
- 0285US5396095AMethod of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitorPHILIPS CORP·Filed 1994·Granted Mar 7, 1995·57 cites·4 claims
- 0383US5744832ASemiconductor device having a ferroelectric memory element with a lower electrode provided with an oxygen barrierPHILIPS CORP·Filed 1995·Granted Apr 28, 1998·64 cites·9 claims
- 0475US5160762AMethod of manufacturing mono-layer capacitorsPHILIPS CORP·Filed 1991·Granted Nov 3, 1992·40 cites·11 claims
- 0573US6140173AMethod of manufacturing a semiconductor device comprising a ferroelectric memory elementPHILIPS CORP·Filed 1998·Granted Oct 31, 2000·33 cites·12 claims
- 0672US5554559AMethod of manufacturing a semiconductor device having a capacitor with a ferroelectric, dielectricPHILIPS CORP·Filed 1994·Granted Sep 10, 1996·30 cites·8 claims
- 0752US7943509B2Method of making an interconnect structureNXP BV·Filed 2008·Granted May 17, 2011·1 cites·8 claims
- 0845US5399235AMethod of manufacturing a semiconductor device in which a surface of a semiconductor body is provided with mutually-insulated aluminum tracksPHILIPS CORP·Filed 1994·Granted Mar 21, 1995·15 cites·6 claims
- 0941US5858183AMethod of manufacturing semiconductor devices each including a semiconductor body with a surface provided with a metallization having a Ti layer and a TiN layerPHILIPS CORP·Filed 1995·Granted Jan 12, 1999·13 cites·6 claims
- 1039US5366928AMethod of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor bodyPHILIPS CORP·Filed 1993·Granted Nov 22, 1994·9 cites·10 claims
- 1138US5266524AMethod of manufacturing a semiconductor device whereby a layer containing aluminium is deposited on a surface of a semiconductor bodyPHILIPS CORP·Filed 1992·Granted Nov 30, 1993·9 cites·5 claims
- 1236US8138768B2Sensing circuit for devices with protective coatingVAN GELOVEN JOHANNES A J·Filed 2008·Granted Mar 20, 2012·0 cites·23 claims
- 1332US5360994ASemiconductor device having a surface with a barrier layer of Tix W1-xPHILIPS CORP·Filed 1993·Granted Nov 1, 1994·7 cites·2 claims
- 1429US5278450ASemiconductor contact with discontinuous noble metalPHILIPS CORP·Filed 1992·Granted Jan 11, 1994·2 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →