Inventor · disambiguated record
Ronghua Zhu
Also filed as: ZHU RONGHUA
82 granted patents·10 pending applications·815 citations·filing 2000–2025
99Inventor score
Top patents by PatentIndex Score
92 records- 0196US10944001B1Deep trench and junction hybrid isolationNXP USA INC·Filed 2020·Granted Mar 9, 2021·5 cites·20 claims
- 0296US9905687B1Semiconductor device and method of makingNXP USA INC·Filed 2017·Granted Feb 27, 2018·21 cites·20 claims
- 0395US9941350B1Semiconductor device isolation via depleted coupling layerNXP USA INC·Filed 2017·Granted Apr 10, 2018·13 cites·16 claims
- 0495US8134222B2MOS capacitor structuresKHAN TAHIR A·Filed 2010·Granted Mar 13, 2012·26 cites·20 claims
- 0594US9761707B1Laterally diffused MOSFET with isolation regionFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Sep 12, 2017·13 cites·20 claims
- 0693US9831338B1Alternating source region arrangementNXP USA INC·Filed 2017·Granted Nov 28, 2017·8 cites·24 claims
- 0792US7466006B2Structure and method for RESURF diodes with a current diverterFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Dec 16, 2008·24 cites·15 claims
- 0892US6882023B2Floating resurf LDMOSFET and method of manufacturing sameMOTOROLA INC·Filed 2002·Granted Apr 19, 2005·70 cites·22 claims
- 0991US7282386B2Schottky device and method of formingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 16, 2007·22 cites·13 claims
- 1090US10297590B1Electro-static discharge protection device and method of makingNXP USA INC·Filed 2018·Granted May 21, 2019·6 cites·19 claims
- 1190US8338872B2Electronic device with capcitively coupled floating buried layerKHEMKA VISHNU K·Filed 2010·Granted Dec 25, 2012·17 cites·20 claims
- 1290US8330220B2LDMOS with enhanced safe operating area (SOA) and method thereforKHAN TAHIR A·Filed 2010·Granted Dec 11, 2012·13 cites·11 claims
- 1390US8278710B2Guard ring integrated LDMOSKHEMKA VISHNU K·Filed 2010·Granted Oct 2, 2012·18 cites·20 claims
- 1490US6528849B1Dual-gate resurf superjunction lateral DMOSFETMOTOROLA INC·Filed 2000·Granted Mar 4, 2003·59 cites·19 claims
- 1589US7851889B2MOSFET device including a source with alternating P-type and N-type regionsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Dec 14, 2010·16 cites·20 claims
- 1689US7439584B2Structure and method for RESURF LDMOSFET with a current diverterFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 21, 2008·18 cites·15 claims
- 1788US11448690B2Screening method and apparatus for detecting deep trench isolation and SOI defectsNXP USA INC·Filed 2021·Granted Sep 20, 2022·2 cites·20 claims
- 1888US8969958B1Integrated MOS power transistor with body extension region for poly field plate depletion assistKHEMKA VISHNU·Filed 2012·Granted Mar 3, 2015·12 cites·9 claims
- 1987US9871135B2Semiconductor device and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted Jan 16, 2018·5 cites·9 claims
- 2087US6693339B1Semiconductor component and method of manufacturing sameMOTOROLA INC·Filed 2003·Granted Feb 17, 2004·43 cites·28 claims
- 2186US8963241B1Integrated MOS power transistor with poly field plate extension for depletion assistKHEMKA VISHNU·Filed 2012·Granted Feb 24, 2015·10 cites·14 claims
- 2286US8623732B2Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structureGROTE BERNHARD H·Filed 2010·Granted Jan 7, 2014·9 cites·16 claims
- 2386US8193585B2Semiconductor device with increased snapback voltageGROTE BERNHARD H·Filed 2009·Granted Jun 5, 2012·15 cites·20 claims
- 2485US6573562B2Semiconductor component and method of operationMOTOROLA INC·Filed 2001·Granted Jun 3, 2003·42 cites·27 claims
- 2584US7777257B2Bipolar Schottky diode and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 17, 2010·11 cites·20 claims
- 2684US7732274B2High voltage deep trench capacitorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 8, 2010·9 cites·15 claims
- 2784US7180158B2Semiconductor device and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 20, 2007·11 cites·5 claims
- 2884US7095092B2Semiconductor device and method of forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 22, 2006·30 cites·22 claims
- 2982US10297676B2Partially biased isolation in semiconductor deviceNXP USA INC·Filed 2016·Granted May 21, 2019·4 cites·19 claims
- 3082US7851857B2Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applicationsFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Dec 14, 2010·10 cites·20 claims
- 3182US7791161B2Semiconductor devices employing poly-filled trenchesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 7, 2010·11 cites·15 claims
- 3282US7723204B2Semiconductor device with a multi-plate isolation structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted May 25, 2010·11 cites·12 claims
- 3382US7511319B2Methods and apparatus for a stepped-drift MOSFETFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 31, 2009·9 cites·16 claims
- 3481US7608908B1Robust deep trench isolationFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 27, 2009·12 cites·20 claims
- 3580US7405128B1Dotted channel MOSFET and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jul 29, 2008·8 cites·7 claims
- 3679US7141860B2LDMOS transistorFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 28, 2006·24 cites·10 claims
- 3778USD1068739SEarphoneNINGBO SOGEN ELECTRONICS TECH CO LTD·Filed 2023·Granted Apr 1, 2025·9 cites·1 claims
- 3878US10177252B2Semiconductor device isolation with RESURF layer arrangementNXP USA INC·Filed 2016·Granted Jan 8, 2019·2 cites·12 claims
- 3978US8188543B2Electronic device including a conductive structure extending through a buried insulating layerROGGENBAUER TODD C·Filed 2006·Granted May 29, 2012·12 cites·11 claims
- 4077US7550804B2Semiconductor device and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 23, 2009·7 cites·19 claims
- 4176US11127622B2Deep trench isolation and substrate connection on SOINXP USA INC·Filed 2020·Granted Sep 21, 2021·1 cites·7 claims
- 4276US8384184B2Laterally diffused metal oxide semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Feb 26, 2013·3 cites·15 claims
- 4376US6734524B1Electronic component and method of manufacturing sameMOTOROLA INC·Filed 2002·Granted May 11, 2004·21 cites·33 claims
- 4474US8816434B2Laterally double diffused metal oxide semiconductor transistors having a reduced surface field structuresFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Aug 26, 2014·3 cites·16 claims
- 4573US6750524B2Trench MOS RESURF super-junction devicesMOTOROLA FREESCALE SEMICONDUCT·Filed 2002·Granted Jun 15, 2004·23 cites·16 claims
- 4671US8344472B2Semiconductor device and methodFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Jan 1, 2013·3 cites·20 claims
- 4771US7309638B2Method of manufacturing a semiconductor componentFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Dec 18, 2007·4 cites·10 claims
- 4870US10418483B2Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layersNXP BV·Filed 2017·Granted Sep 17, 2019·1 cites·19 claims
- 4970US7436025B2Termination structures for super junction devicesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 14, 2008·4 cites·20 claims
- 5069US9196681B1Metal oxide semiconductor field effect transistor with reduced surface field foldingMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Nov 24, 2015·2 cites·20 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Ronghua Zhu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →