Inventor · disambiguated record
Ruey-Wen Chang
Also filed as: CHANG RUEY-WEN
7 granted patents·3 pending applications·11 citations·filing 2019–2025
76Inventor score
Top patents by PatentIndex Score
10 records- 0196US11527539B2Four-poly-pitch SRAM cell with backside metal tracksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·6 cites·20 claims
- 0294US11552084B2Shared bit lines for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 10, 2023·3 cites·20 claims
- 0381US2025308582A1Static random access memory layoutTAIWAN SEMICONDUCTGOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0476US10977409B1Apparatus and method of generating a layout for a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 13, 2021·1 cites·20 claims
- 0571US12048135B2Four-poly-pitch SRAM cell with backside metal tracksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 23, 2024·0 cites·20 claims
- 0671US11675949B2Space optimization between SRAM cells and standard cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 13, 2023·1 cites·20 claims
- 0770US2025220869A1Compact static random-access memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0867US12256528B2Compact static random-access memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 18, 2025·0 cites·20 claims
- 0959US12160985B2Shared bit lines for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1054US2023267263A1Space Optimization Between SRAM Cells and Standard CellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Ruey-Wen Chang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →