Inventor · disambiguated record
Ru-Shang Hsiao
Also filed as: HSIAO RU-SHANG
78 granted patents·45 pending applications·175 citations·filing 2007–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD112HSIAO RU-SHANG5TAIWAN SEMICONDUCTOR MFG5TAIWAN SEMICONDUCTOR MANUFACTUING CO LTD1
Top patents by PatentIndex Score
123 records- 0196US12021130B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0296US11961731B2Method and structure for semiconductor interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 0396US11949000B2Metal gate structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·3 cites·20 claims
- 0495US9997633B2Semiconductor devices, FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·11 cites·17 claims
- 0594US12027609B2Gate structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 0692US11699702B2Input/output devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 11, 2023·3 cites·20 claims
- 0792US9246002B2Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 26, 2016·13 cites·20 claims
- 0891US9252233B2Air-gap offset spacer in FinFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 2, 2016·52 cites·20 claims
- 0990US11588038B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 1089US12283595B2Integration of multiple transistors having fin and mesa structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 22, 2025·1 cites·20 claims
- 1189US12119265B2High voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 15, 2024·2 cites·20 claims
- 1289US11450758B2Gate structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 1388US9159812B1Fin sidewall removal to enlarge epitaxial source/drain volumeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 13, 2015·9 cites·20 claims
- 1487US11961891B2Structure for metal gate electrode and method of fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·1 cites·20 claims
- 1587US10847636B2Methods for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·3 cites·20 claims
- 1687US2025359276A1Circuit Structure with Gate ConfigurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1786US9728637B2Mechanism for forming semiconductor device with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 8, 2017·4 cites·20 claims
- 1886US2025359309A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1984US2025351565A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2083US12464801B2Circuit structure with gate configurationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 2183US10008501B2Sandwich EPI channel for device enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 26, 2018·3 cites·20 claims
- 2283US9466670B2Sandwich epi channel for device enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 11, 2016·5 cites·20 claims
- 2383US2025072082A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2482US12224213B2High voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 11, 2025·1 cites·20 claims
- 2582US9449811B2Air-gap scheme for BEOL processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·4 cites·20 claims
- 2682US9281215B2Mechanism for forming gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 8, 2016·5 cites·13 claims
- 2781US11502185B2Methods of manufacturing a gate electrode having metal layers with different average grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·1 cites·20 claims
- 2881US9570561B2Modified channel position to suppress hot carrier injection in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·5 cites·19 claims
- 2981US2025338650A1Image sensor and method of manufacturing image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3081US2024395947A1Finfet mos capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3180US10680103B2Method of forming semiconductor device with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 9, 2020·2 cites·20 claims
- 3280US2025365994A1Capacitor structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3380US2025359087A1Metal-Oxide-Semiconductor Capacitors and Methods of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US10062603B2Air-gap scheme for BEOL processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 28, 2018·2 cites·20 claims
- 3579US9842932B1FinFET with P/N stacked fins and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 12, 2017·2 cites·20 claims
- 3679US9558955B2Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·3 cites·20 claims
- 3779US2024258096A1Method and structure for semiconductor interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3879US2025364465A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3978US12507429B2Metal gate structures and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 4078US12389625B2Semiconductor device with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 4178US9985122B2Semiconductor structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 29, 2018·2 cites·20 claims
- 4278US9543399B2Device having sloped gate profile and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·3 cites·21 claims
- 4378US2025142953A1Semiconductor devicesTAIWAN SEMICONDUCTOR MANUFACTUING CO LTD·Filed 2024·Application pending·0 cites
- 4478US2024387536A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4578US2025344488A1High voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4678US2025338522A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4778US2024363734A1P-Type FiNFET as a Radio-Frequency Device and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4877US12342553B2Semiconductor devices and methods for increased capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 4977US12159921B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 5077US10056455B1Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·2 cites·20 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →