Inventor · disambiguated record
Rueijer Lin
Also filed as: LIN RUEIJER
24 granted patents·2 pending applications·21 citations·filing 2013–2025
93Inventor score
Top patents by PatentIndex Score
26 records- 0196US11532561B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0294US10312098B2Method of forming an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·6 cites·20 claims
- 0389US12176435B2Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·1 cites·20 claims
- 0485US10163644B2Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 25, 2018·4 cites·20 claims
- 0584US12278188B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 0683US2025239527A1Different Via Configurations for Different Via Interface RequirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0782US11908697B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 0882US10867800B2Method of forming an interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·1 cites·20 claims
- 0979US12142565B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 1076US11527411B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 1176US8975187B2Stress-controlled formation of tin hard maskTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·2 cites·20 claims
- 1274US11107896B2Vertical interconnect features and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·1 cites·20 claims
- 1374US11062909B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
- 1473US10714329B2Pre-clean for contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·1 cites·20 claims
- 1567US10529575B2Interconnect structure having a carbon-containing barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 7, 2020·0 cites·20 claims
- 1667US9601430B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·1 cites·20 claims
- 1766US9818834B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·1 cites·20 claims
- 1865US11855154B2Vertical interconnect features and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 1962US11271112B2Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 8, 2022·0 cites·20 claims
- 2058US2020343087A1Pre-Clean for ContactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 2156US10505045B2Fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·0 cites·20 claims
- 2255US9991125B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·0 cites·20 claims
- 2355US9218970B2Stress-controlled formation of TiN hard maskTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 22, 2015·0 cites·20 claims
- 2453US10050116B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 2540US10163719B2Method of forming self-alignment contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·0 cites·20 claims
- 2639US10840105B2Gate structure with insulating structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 17, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →